High Quality SiC Bulk Growth by Sublimation Method using Elemental Silicon and Carbon Powder as SiC Source Materials

Abstract

The growth of 6H-SiC bulk by physical vapor transport (PVT) method using elemental silicon (Si) and carbon (C) powder as source materials has been investigated. To investigate the optical and electrical characteristics of bulk crystals, the C/Si ratio of source materials was varied. The properties of bulk crystals, obtained by this method were compared with crystals grown using SiC powder that was used for abrasive purposes. By using elemental Si and C, the purity of the bulk crystal was improved with a resistivity of 3 x 10 6 Ω-cm.