High-Quality Polysilicon Thin Film Recrystallization by Laser Annealing

Abstract

Amorphous silicon (a:Si) recrystalized to poly-silicon (poly:Si) in different gas environments by excimer laser annealing (ELA) is studied. Variations of threshold laser power for the generation of surface ablation in pure N2 gas and the mixture of N2:98% and O2:2% environments are also investigated, respectively. From experiments, it is found the combination of N2:98% and O2:2% gas can enhance the threshold laser power from 320mJ/cm2 to 390mJ/cm2 for the suppressing of surface ablation phenomenon. In the condition of average grain over 0.25um, the process window (i.e. laser power for processing ability) is 30mJ/cm2 for pure N2 only, but is 50mJ/cm2 for the combination of N2:98% and O2:2%.