High-Quality p-Type a-SiC Films Obtained by Using a New Doping Gas of B(CH₃)₃

Abstract

High-quality p-type a SiC films can be fabricated by using a new type of doping gas, B(CH3)3, instead of B2H6 in a photo-CVD method and a glow discharge method. The photoconductivity and doping efficiency of a-SiC films fabricated by the photo-CVD method are improved by using B(CH3)3. A reduction of tail state density and an increase in photoluminescence are also observed. Furthermore, a bandgap narrowing in highly B-doped a-SiC films fabricated by the glow discharge method can be prevented by using B(CH3)3. A conversion efficiency of 10.0% (total area efficiency of 9.02%) is obtained for a 100 cm2 integrated-type a-Si solar cell whose p-layer was fabricated by the glow discharge method with B(CH3)3.

Optimisation of doped microcrystalline silicon films deposited at very low temperatures by hot-wire CVD

“…This result is explained by the well-known thermal dissociation of diborane [9]. We must consider that the dissociation efficiency of the hot wire is quite low at the process pressure at which the samples were obtained.…”

Evolution of Structural and Electronic Properties in Boron-doped Nanocrystalline Silicon Thin Films

“…In this work, we investigate the effect of boron doping on the structural and electronic properties in nc-Si:H thin films and its application to TFTs by using TMB as a doping gas, which has the increased thermal stability over diborane (B 2 H 6 ) currently used for the TFT fabrication [5].…”

Structural and electrical properties of trimethylboron-doped silicon nanowires

“…The B-C bond dissociation energy in TMB is approximately 87 kcal/ mol, leading to an increased thermal stability for TMB compared to B 2 H 6 . 16 The reduced reactivity of TMB enables the growth of highly B-doped SiNWs without a thick amorphous Si coating.…”