Abstract:A heterostructure of Sn-doped In2O3 (ITO)/Al-doped ZnO (AZO)/n-Si was proposed and studied for photovoltaics. The top ITO worked as a transparent conducting layer for excellent optical transparency and current collection. The AZO/n-Si served as the active junction and provided the built-in potential (qVbi) for the photovoltaic devices. To achieve a higher open circuit voltage (Voc), which is the main challenge for AZO/Si heterojunctions due to the junction interfacial defects, the AZO and AZO/Si junction prope… Show more
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