High-Quality InSb Grown on Semi-Insulting GaAs Substrates by Metalorganic Chemical Vapor Deposition for Hall Sensor Application

Li, Xin; Yu, Zhaoju; Xiong, Ming; Wu, Qing; Teng, Yuping; Hao, Xiujun; Huang, Yong; Hu, Shuangyuan; Zhu, Xin

doi:10.1088/0256-307x/36/1/017302

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References 11 publications

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“…Recently, Wu et al reported MOCVD-grown LWIR InAs/InAsSb SL single element detectors with a peak detectivity of 5.4×10 10 cm•Hz 1/2 /W [11]. In our group, we have carried out extensively the growth of Sb-based materials by MOCVD [12], [13]. We previously reported high-quality InAs/GaSb SL materials grown by MOCVD with nearly zero strain and atomic flat surface by inserting GaAs-like interfacial layers [14].…”

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confidence: 98%

Demonstration of MOCVD-Grown Long-Wavelength Infrared InAs/GaSb Superlattice Focal Plane Array

et al. 2021

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High-performance InAs/GaSb type-II superlattice infrared detectors and focal plane arrays (FPAs) are normally grown by molecular beam epitaxy (MBE). In this work, we demonstrate the first longwavelength infrared InAs/GaSb superlattice FPA grown by metalorganic chemical vapor deposition (MOCVD) with clear image. High-quality superlattice material was obtained evidenced by sharp X-ray diffraction peaks and atomic flat surface. Electrical and optical measurements performed on single element detectors showed a 50% cut-off wavelength of ~10.1 μm, a dark current density of 2.5×10 −5 A/cm 2 , a peak responsivity of 0.88 A/W and a peak detectivity of 1.7×10 11 cm•Hz 1/2 /W at 80 K. A 320 × 256 FPA with 30 μm pixel pitch was then fabricated. With an integration time of 1.9 ms and an applied bias of -0.1 V, the FPA shows an average operability of 96.96%, a non-uniformity of 4.97%, a noise equivalent temperature difference of 51.1 mK and a peak detectivity of 2.3×10 10 cm•Hz 1/2 /W at 80 K without thinning down the substrate.INDEX TERMS Long-wavelength infrared, InAs/GaSb superlattice, focal plane array, metalorganic chemical vapor deposition.

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