High-quality InP surface corrugations for 1.55 μm InGaAsP DFB lasers fabricated using electron-beam lithography

Westbrook, L.D.; Nelson, A. H.; Dix, C.

doi:10.1049/el:19820586

Cited by 17 publications

(3 citation statements)

References 4 publications

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“…The grating can be fabricated either by using a holographic technique based on laser beam interference [2], [3] or by using electron beam lithography (EBL) [4]. EBL has many advantages compared to holographic methods.…”

Section: Introductionmentioning

confidence: 99%

The effect of stitching errors on the spectral characteristics of DFB lasers fabricated using electron beam lithography

Kjellberg

Schatz

1992

J. Lightwave Technol.

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We present the first comprehensive investigation on field stitching errors and their effect on the single-mode characteristics of DFB lasers fabricated using electron beam lithography. The stitching errors are associated with small-area, high-resolution electron beam exposure, which has the potential advantage of high-speed writing of laser gratings. Measurements show that the errors are composed of a systematic and a stochastic part. Their effect on the gain margin was simulated both for X/4 phase-shifted and optimized multiple-phase-shifted DFB lasers. Simulations show that the lasers are insensitive to the systematic part of the stitching errors if the number of errors is large enough.The stochastic part was found to give rise to a variation in gain margin of the DFB lasers. We have concluded that the field stitching accuracy in the high-resolution mode of a commercial system for electron beam lithography is sufficient to provide a high yield of single-mode lasers. However, it is essential that certain precautions are taken considering exposure conditions, and that a fault tolerant laser design is used.

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Section: Introductionmentioning

confidence: 99%

The effect of stitching errors on the spectral characteristics of DFB lasers fabricated using electron beam lithography

Kjellberg

Schatz

1992

J. Lightwave Technol.

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“…In most cases, these impurities and defects affect the electrical properties of the crystals, and therefore have a significant effect on the performance of electronic devices. Although there have been a large number of experimental investigations (1)(2)(3)(4)(5)(6)(7)(8)(9)(10)(11)(12)(13) to study the energy levels arising from these impurities and defects and their carrier trapping and emitting properties by means of capacitance transient techniques such as deep-level transient spectroscopy (DLTS) (14), relatively little work has been accomplished so far on the effects of such electrically active centers on the electrical properties of silicon crystals (15)(16)(17)(18)(19)(20)(21). However, the results of such work would indeed be very helpful to design the optimum fabrication process of desirable devices.…”

Section: Introductionmentioning

confidence: 99%

“…Traces of resist are often trapped inside the narrow grooves between gratings and can lead to an inferior epitaxial growth in subsequent processing. Oxygen plasma (8) is generally used to clean the residual resists, and the typical conditions in a barreltype reactor are 100% 02 at 200 mtorr for 20 rain at a plasma input power of 300W. However, reaction by-products from the oxygen plasma are usually found redeposited on the grating surface (9) and a wet chemical cleaning process must be used to remove these reaction by-products.…”

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confidence: 99%

Chemical Cleaning of Gratings in Distributed Feedback InP Lasers

Huo

Yan

Wynn

1990

J. Electrochem. Soc.

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We have studied three chemical solutions for cleaning gratings prior to InP epitaxial growth for distributed feedback laser applications. These chemicals are concentrated H2SO4 and mixed solutions of nH2SO4--H~O2--H20 where n = 5 and 10. On InP substrates, the etching rate of H2SO4--H202--H20 solutions was about 2-3 times faster than that of concentrated H2SO4. The H2SO4--H202--H20 s~lutions etched the grating structure isotropically and preserved the original grating morphology. However, H2SO4 tended to remove the sharp ridges of the original grating and reduce the distributed feedback effect. We have also found that the H2SO4--H20~--H20 solutions are much more effective than H2SO4 in removing carbon contaminants, which could provide nucleation sites for dislocation loops and adversely affect the laser diodes' reliability.Recently, considerable interest has been devoted to distributed feedback (DFB) lasers because of their stable emission wavelength and narrow spectral linewidth. These performance attributes are important to a n u m b e r of optical fiber communication applications such as high bit rate, long-haul fiber links, wavelength multiplexing, and coherent communication systems. The fabrication of DFB lasers involves three major steps: (i) grating fabrication, (ii) wafer cleaning, and (iii) overgrowth of hetero-

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Coherent Optical Fiber Communication Systems—The Promise for the Future

Stanley¹,

Smith²

1989

Optoelectronic Technology and Lightwave Communications Systems

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High-quality InP surface corrugations for 1.55 μm InGaAsP DFB lasers fabricated using electron-beam lithography

Cited by 17 publications

References 4 publications

The effect of stitching errors on the spectral characteristics of DFB lasers fabricated using electron beam lithography

The effect of stitching errors on the spectral characteristics of DFB lasers fabricated using electron beam lithography

Chemical Cleaning of Gratings in Distributed Feedback InP Lasers

Coherent Optical Fiber Communication Systems—The Promise for the Future

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