High quality InP nanopyramidal frusta on Si

Abstract

Octagonal nanopyramidal InP frusta grown selectively on silicon.

(Invited) Monolithic Integration of InP Based Structures on Silicon for Optical Interconnects

“…Two types of samples are used in these experiments, InP seed on Si and InP substrates. To facilitate SAG, ~ 150 nm thick SiO 2 mask is deposited using PECVD and soft UV- NIL is used for pattern definition (17). Nano sized circular openings with varying diameters and pitches are defined by standard reactive ion etching (RIE) of SiO 2 mask using photoresist as an etch mask.…”

“…The eight sides surrounding the top flat surface are low index facets. The exact index of these facets is revealed by the line scan of NPF sidewalls using AFM, which resulted in two angles, 54° for {111} planes and 45° for {110} planes (17). Incorporation of growth rate determining species in these confined areas during HVPE growth controls the crystal symmetry rearrangement that results in the formation of these planes (26).…”

“…But such QD structures put a strict demand on the site and size control with optimal density to achieve homogenous operation over a long period of time. These conditions could however be met with our proposed technique, where size, site and density of such structures can be controlled by the pattern design and growth time (17). These NPF are indeed a perfect example of this, where flat top surface of NPF can be used for the SAG growth of QD structures (28).…”

“…Quantum dot (QD) lasers have several advantages over QW lasers such as lower temperature insensitive laser threshold current density, larger modulation bandwidth (12) (13) (14) and in addition, these can generate single photon sources ( 15), entangled photon sources ( 16 ) and quantum bits for quantum computation. We demonstrate that templates with InP frusta on silicon for QD growth can be achieved by combining nanoimprinting and epitaxial growth (17). Morphological and optical studies of these templates are indicative of their potential for monolithic integration of QDs on silicon for silicon photonics and nanophotonics.…”

Thermal conductivity of epitaxially grown InP: experiment and simulation

“…For example, improved manufacturing paths have enabled the fabrication of low-loss passive devices such as filters, waveguides, beam splitters and combiners, which are now standard available devices. [1][2][3][4] However, the development of active devices and, in particular, the integration of efficient light sources remain an open engineering challenge as far as heat dissipation is concerned. The successful fabrication of such integrated de-vices holds the key to accomplishing the long-term dream of the photonics and electronics industries: a fully integrated III-V/Si platform.…”