High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy

Sasaoka, Chiaki; Sunakawa, Hajime; Kimura, Akitaka; Nido, M.; Usui, Akira; Sakai, Akira

doi:10.1016/s0022-0248(98)00169-9

Cited by 87 publications

(53 citation statements)

References 5 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The higher threshold current density is probably caused by the large number of TD density of 1 ϫ 10 7 cm Ϫ2 at the window region. It was reported that the TD served as a diffusion pathway of metals, and did as a leakage current pathway in InGaN and GaN (57,58). Thus, it is possible that a leakage current due to a large number of TDs caused the high threshold current density on the window region.…”

Section: S P E C I a L S E C T I O N C O N T R O L A N D U S E O F D mentioning

confidence: 99%

“…Recently, it was confirmed that these TDs affect device performance. The TDs served as a diffusion pathway of metals and acted as a leakage current pathway in InGaN and GaN (57,58). For InGaN layer, an open hexagonal inverted pyramid called "V-defect" (59), spatial inhomogeneities of In composition (60,61), and pit formations (62,63) initiated at TDs in GaN film were reported.…”

mentioning

confidence: 99%

See 1 more Smart Citation

The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

Nakamura

1998

Science

1,781

978

View full text Add to dashboard Cite

High-efficiency light-emitting diodes emitting amber, green, blue, and ultraviolet light have been obtained through the use of an InGaN active layer instead of a GaN active layer. The localized energy states caused by In composition fluctuation in the InGaN active layer are related to the high efficiency of the InGaN-based emitting devices. The blue and green InGaN quantum-well structure light-emitting diodes with luminous efficiencies of 5 and 30 lumens per watt, respectively, can be made despite the large number of threading dislocations (1 ϫ 10 8 to 1 ϫ 10 12 cm Ϫ2 ). Epitaxially laterally overgrown GaN on sapphire reduces the number of threading dislocations originating from the interface of the GaN epilayer with the sapphire substrate. InGaN multi-quantum-well structure laser diodes formed on the GaN layer above the SiO 2 mask area can have a lifetime of more than 10,000 hours. Dislocations increase the threshold current density of the laser diodes.The brightness and durability of light-emitting diodes (LEDs) make them ideal for displays, and semiconductor laser diodes (LDs) have been used in numerous device applications from optical communications systems to compact disk (CD) players. These applications have been limited, however, by the lack of materials that can emit blue light efficiently. Full-color displays, for example, require at least three primary colors, usually red, green, and blue, to produce any visible color. Such a combination is also needed to make a white lightemitting device that would be more durable and consume less power than conventional incandescent bulbs or fluorescent lamps. The shorter wavelength means that the light can be focused more sharply, which would increase the storage capacity of magnetic and optical disks. Digital versatile disks (DVDs), which came onto the market in 1996, rely on red aluminum indium gallium phosphide (AlInGaP) semiconductor lasers and have a data capacity of about 4.7 gigabytes (Gbytes), compared to 0.65 Gbytes for compact disks. By moving to violet wavelengths emitted by III-V nitride-based semiconductors, the capacity could be increased to 15 Gbytes. The violet III-V nitridebased LDs could also improve the performance of laser printers and undersea optical communications. Such III-V nitride-based semiconductors have a direct band gap that is suitable for blue light-emitting devices. The band gap energy of aluminum gallium indium nitride (AlGaInN) varies between 6.2 and 2.0 eV, depending on its composition, at room temperature (RT). Thus, by using these semiconductors, red-to ultraviolet (UV)-emitting devices can be fabricated.The first breakthrough for III-V nitride-based semiconductors was the use of AlN (1, 2) or GaN (3, 4) nucleation layers for the GaN growth. By using these nucleation layers, it became possible to obtain high-quality GaN films with a mirrorlike flat surface, a low residual carrier concentration, high carrier mobilities, and a strong photoluminescence (PL) intensity. The second big breakthrough for III-V nitride-based LEDs and LDs...

show abstract

Section: S P E C I a L S E C T I O N C O N T R O L A N D U S E O F D mentioning

confidence: 99%

mentioning

confidence: 99%

The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

Nakamura

1998

Science

1,781

978

View full text Add to dashboard Cite

show abstract

“…3,4 The interfacial energy difference between sapphire and GaN could cause large amount of dislocations and low crystal quality of the subsequently grown GaN layer. 5 The degraded quality of GaN layers presents intensive nonradiative recombination centers severely reducing the efficiency. 6 For the purpose of decreasing the energy difference from lattice constant and thermal expansion coefficient mismatch between sapphire substrates and GaN, early pioneers applied in-situ low temperature AlN or GaN film to form the nucleation layer which provide a stable surface condition to grow the following bulk GaN.…”

mentioning

confidence: 99%

Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

Chen

2016

AIP Advances

View full text Add to dashboard Cite

show abstract

“…The higher threshold current density is probably caused by the large number of TD density of 1 x 10 7 cm -2 at the window region. It was reported that the TD served as a diffusion pathway of metals, and did as a leakage current pathway in InGaN and GaN [49,50]. Thus, there is a possibility that a leakage current due to a large number of TDs caused the high threshold current density on the window region.…”

Section: Ingan-based Violet Ldsmentioning

confidence: 99%

Recent Developments in InGaN-Based Blue Leds and Lds

Nakamura

1999

Acta Phys. Pol. A

View full text Add to dashboard Cite

UV/blue/green/amber InGaN quantum-well structure light-emitting diodes with an external quantum efficiency of 7.5%, 11.2%, 11.6%, and 3.3% were developed. The localization in the InGaN well layer induced by the In composition fluctuations seems to be a key role of the high efficiency of those InGaN-based light-emitting diodes. When the electrons and holes are injected into the InGaN active layer of the light-emitting diodes, these carriers are captured by the localized energy states before they are captured by the nonradiative recombination centers caused by the large number of threading dislocations. InGaN multi-quantum-well structure laser diodes ' with modulation doped strained-layer superlattice cladding layers grown on the epitaxially lateral overgrown GaN substrate were demonstrated to have an estimated lifetime of more than 10000 hours under-room temperature continuous-wave operation. When the laser diode was formed on the GaN layer above the SiO2 mask region without any threading dislocations, the threshold current density was as low as 2.7 kA cm -2 . When the laser diode was formed on the window region with the high threading dislocation density, the threshold current density was as high as 4.5 to 9 kA cm -2 . A leakage current due to a large number of threading dislocations caused the high threshold current density on the window region.

show abstract

High-quality InGaN MQW on low-dislocation-density GaN substrate grown by hydride vapor-phase epitaxy

Cited by 87 publications

References 5 publications

The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes

Improved performance of GaN based light emitting diodes with ex-situ sputtered AlN nucleation layers

Recent Developments in InGaN-Based Blue Leds and Lds

Contact Info

Product

Resources

About