High-Quality Few-Layer Graphene on Single-Crystalline SiC thin Film Grown on Affordable Wafer for Device Applications

Abstract

Graphene is promising for next-generation devices. However, one of the primary challenges in realizing these devices is the scalable growth of high-quality few-layer graphene (FLG) on device-type wafers; it is difficult to do so while balancing both quality and affordability. High-quality graphene is grown on expensive SiC bulk crystals, while graphene on SiC thin films grown on Si substrates (GOS) exhibits low quality but affordable cost. We propose a new method for the growth of high-quality FLG on a new template named “hybrid SiC”. The hybrid SiC is produced by bonding a SiC bulk crystal with an affordable device-type wafer and subsequently peeling off the SiC bulk crystal to obtain a single-crystalline SiC thin film on the wafer. The quality of FLG on this hybrid SiC is comparable to that of FLG on SiC bulk crystals and much higher than of GOS. FLG on the hybrid SiC exhibited high carrier mobilities, comparable to those on SiC bulk crystals, as anticipated from the linear band dispersions. Transistors using FLG on the hybrid SiC showed the potential to operate in terahertz frequencies. The proposed method is suited for growing high-quality FLG on desired substrates with the aim of realizing graphene-based high-speed devices.

Graphene-Based Plasmonic Terahertz Laser Transistors

“…Another method is chemical doping, but it has problems such as unintentional doping to other parts of the substrate, degrading the crystallinity, and shortening of carrier momentum relaxation time. Recently,anewtechniquehasbeendevelopedto synthesize high-quality few-layer epitaxial graphene on single-crystalline SiC thin films grown on Si wafers [42]. Precise control of the epitaxially grown graphene layers also remains a challenge, which could be addressed by introducing microfabricated SiC substrate technology that can spatially limit the epitaxial area [43].…”

Modification on Flower Defects and Electronic Properties of Epitaxial Graphene by Erbium

“…Graphene, a two-dimensional carbon-based material with a honeycomb lattice, has attracted great interests in recent years because of its remarkable electronic and mechanical properties and compatibility with silicon-based circuits. − In particular, the extremely high mobility and considerable controllability of charge carriers by applying a gate voltage have made graphene a promising material for next-generation electronics with properties that may exceed those of conventional semiconductors. − As the valence and conduction bands are degenerate at the Dirac point, graphene is a zero-gap semiconductor, limiting its further application in the semiconductor industry. Therefore, we need to induce a band gap at the Dirac point, leading to a semiconducting phase and ultimately to induce spin splitting of the Dirac cone for spintronic applications; thus, how to induce a gap is crucial for its application in making devices. , Among the various methods used to grow graphene, thermal decomposition of SiC substrates at elevated temperatures is one of the most promising routes for mass-scale graphene fabrication, which exhibits great potential for the application of electronics because of its ability to fabricate wafer-size high-quality graphene and convenience for direct processing on the semi-insulating substrate without transfer. , However, so far, the electronic band gap of epitaxial graphene (EG) on SiC is insufficient to meet the requirement for fabrication of a large-scale integrated circuit.…”

Understanding the Mechanisms of SiC–Water Reaction during Nanoscale Scratching without Chemical Reagents

“…As regards semiconductor development, silicon carbide (SiC) materials are currently known to exhibit excellent material advantages such as high forbidden bandwidth, high thermal conductivity, and high electron migration rate as compared with silicon materials [1][2][3][4]. Therefore, SiC devices are being widely used in various fields such as new energy-efficient vehicles, smart grids, and aerospace applications [5][6][7]. However, under high-power and extreme working conditions, the self-heating effects of SiC semiconductor materials gradually become evident and lead to poor heat dissipation and performance degradation [8].…”