High quality epitaxy of YBa2Cu3O7−<i>x</i> on silicon-on-sapphire with the multiple buffer layer YSZ/CeO2

Copetti, Christian; Soltner, H.; Schubert, J.; Zander, W.; Hollricher, O.; Buchal, Ch.; Schulz, H.; Tellmann, N.; Klein, N.

doi:10.1063/1.109647

Cited by 62 publications

(22 citation statements)

References 13 publications

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“…A layer of CeO2 between the YSZ and the YBCO can be used to eliminate the minor variant. 18 Before settling on this fabrication process, two attempts were made at fabricating the device in the opposite order. That is, we tried first depositing, patterning, and ion-milling the Au/YBCO on the Ysz, then etching the silicon to forni the air-bridge.…”

Section: Fabricationmentioning

confidence: 99%

High-T c superconducting antenna-coupled microbolometer on silicon

et al. 1994

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A process is described for fabricating antenna-coupled resistive-edge microbolometers based on the high-Ta superconductor YBaCu3O7 (YBCO) on silicon. The YBCO and a buffer layer of yttriastabilized zirconia (YSZ) were grown epitaxially on silicon to minimize excess electrical noise. A siliconmicromachined YBCO/YSZ air-bridge was incorporated to minimize the thermal conductance and the heat capacity. The thermal conductance of the air-bridge was measured to be 3 x 10 W/K at a temperature of 100 K. At an operating temperature of 89 K, the detector is estimated to have a response time of 2 us, a responsivity in the 1000 VJW range, and a noise-equivalent power (NEP) in the 1012 W/Hz"2 range at 1000 Hz.

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Section: Fabricationmentioning

confidence: 99%

High-T c superconducting antenna-coupled microbolometer on silicon

et al. 1994

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“…The best results so far have been obtained with Yttria-Stabilized-Zirconia (YSZ) [2] or YSZbased multiple layers, e.g. Ce02 / YSZ [3], [4]. However, YSZ reacts with YBCO to form B a r 0 2 and does not lattice match in the c-axis with YBCO (it is therefore not compatible with the edge geometry needed for junction fabrication [5]).…”

Section: Introductionmentioning

confidence: 97%

SrTiO/sub 3/ buffer layers on MgO and Si substrates for high-T/sub c/ technology

Méchin

Meng

Sonnenberg

et al. 1999

IEEE Trans. Appl. Supercond.

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SrTi03 (STO) thin films have been sputtered on MgO (100) and on Si (100) substrates. On MgO the (100)-oriented STO buffer layers enabled the fabrication of high quality DyBazCu307., (DBCO) films and ramp-type junctions (with I, x R, products in the order of 1 mV at 4 K) using exactly the same process as for single crystal STO substrates. On Si the fraction of (110)-oriented material in the STO films have been minimized to 2.5% by the optimization of the deposition conditions. Grain boundaries crossing the whole STO film and an amorphous layer between Si and STO could be observed. An Auger analysis revealed the presence of Barium at the Si / STO interface that presumably diffused along the grain boundaries through STO to form barium silicate. By reducing both the DBCO deposition temperature and the STO thickness we could prevent this diffusion and improve the electrical properties. However rather poor crystalline quality and still non-satisfactory electrical characteristics were obtained ( R 3 a l o 0 -1 and T, (R=O) in the 40-60K range). Overall these results suggest that, on MgO STO is a reliable buffer layer that enables the use of the technological processes handled on single crystal STO substrates. On Si the crystalline quality of the STO layers has to be improved in order to form an efficient diffusion barrier.

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“…In recent years a considerable attention was drawn to fianite films on silicon due to its electric and optic device applications, such as isolating layers in SOI (silicon-on-insulator) devices [32], gate dielectric in Si- [33,34], SiGe- [35] and A III B V -based [36] device structures, buffer layers for producing of optic coatings of films of various semiconductors [37][38][39][40], superconductors [41][42][43], ferroelectrics, etc.…”

Section: Functional Fianite Films On Si Ge and Gaas Substrates 41 Tmentioning

confidence: 99%

Fianite in Photonics

Buzynin¹

2012

Advanced Photonic Sciences

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High quality epitaxy of YBa2Cu3O7−x on silicon-on-sapphire with the multiple buffer layer YSZ/CeO2

Cited by 62 publications

References 13 publications

High-T c superconducting antenna-coupled microbolometer on silicon

High-T c superconducting antenna-coupled microbolometer on silicon

SrTiO/sub 3/ buffer layers on MgO and Si substrates for high-T/sub c/ technology

Fianite in Photonics

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