High quality dielectric film for distributed RC filters and amorphous semiconductors

Ahmad, Subhan; Singh, Ramadhar

doi:10.1016/0040-6090(80)90077-2

Cited by 6 publications

(1 citation statement)

References 17 publications

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“…Under the constant anodization voltage of 2.3 V, it took about 6, 4 and 3 min for electrodes A, B and C to reach the current density below 0.01 mA cm −2 in order to stop the anodization process. Since the anodization ratio is [21,22], an anodization voltage of 2.3 V corresponds to an estimated Al x O y thickness of ∼3 nm. To fabricate IGZO TFTs, a 20 nm thick IGZO (In 2 O 3 : Ga 2 O 3 : ZnO = 1: 1: 1 mol%) channel layer was deposited by radio frequency (RF) magnetron sputtering at room temperature on the anodized Al x O y dielectrics.…”

Section: Methodsmentioning

confidence: 99%

Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized Al_xO_y dielectrics

Lin¹,

Jin²,

Kim³

et al. 2023

Semicond. Sci. Technol.

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Low-voltage oxide semiconductors thin-film transistors (TFTs) with ultra-thin dielectrics are gaining attention in wearable electronics. However, it is a challenge for oxide semiconductor TFTs to operate at a low-voltage while maintaining high performance. In this article, ultra-thin AlxOy films (~3 nm) were grown on aluminium (Al) electrodes with different surface roughness by anodization. The morphology and electrical properties of the anodized AlxOy films were studied. Furthermore, InGaZnO (IGZO) TFTs with the anodized AlxOy dielectrics were fabricated. It was revealed that the rougher Al gate electrode deposition resulted in a higher interface trap density, which lead to the degradation of device performance. Through optimizing the surface roughness of the initial Al gate electrodes that were used for anodization, the IGZO TFTs can operate at 1 V and show desirable properties including a reasonable saturation mobility of 5.5 cm2/Vs, a low threshold voltage of 0.37 V, a small subthreshold swing of 79 mV/decade, and a high current on-off ratio of over 106. This work shows the potential of using anodization in the future for low-power wearable electronics.

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Section: Methodsmentioning

confidence: 99%

Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized Al_xO_y dielectrics

Lin¹,

Jin²,

Kim³

et al. 2023

Semicond. Sci. Technol.

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Multilayer thin film distributed bandpass filter

Ahmad

Singh

1982

Thin Solid Films

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Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors

Liang

Luo

Feng

et al. 1996

Materials Chemistry and Physics

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High quality dielectric film for distributed RC filters and amorphous semiconductors

Cited by 6 publications

References 17 publications

Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized Al_xO_y dielectrics

Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized Al_xO_y dielectrics

Multilayer thin film distributed bandpass filter

Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors

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High quality dielectric film for distributed RC filters and amorphous semiconductors

Cited by 6 publications

References 17 publications

Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized AlxOy dielectrics

Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized AlxOy dielectrics

Multilayer thin film distributed bandpass filter

Characterization of anodic aluminum oxide film and its application to amorphous silicon thin film transistors

Contact Info

Product

Resources

About

Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized Al_xO_y dielectrics

Effects of gate roughness on low voltage InGaZnO thin-film transistors with ultra-thin anodized Al_xO_y dielectrics