High-quality cBN thin films prepared by plasma chemical vapor deposition with time-dependent biasing technique

Peculiar deformation characteristics of turbostratic boron nitride thin film

“…A time dependent biasing technique was employed along with continuous decrease in the substrate bias from À200 to À10 V, under 5 kW plasma power. Details of the experimental apparatus and parameters are described elsewhere [6,7]. Gas flow rates were selected to be 18.0, 0.8, and 8.0 sccm of Ar, N 2 and 10% B 2 H 6 (He), respectively.…”

“…The Cu indenter is made to have a curvature radius of approximately 100 nm, and its displacement resolution was estimated to be approximately 0.18 nm. The variation of the lattice image was recorded on videotape using a fiber-optics-coupled TV system with a time resolution of 1/30 s. On the basis of the IR absorption, the thickness of this t-BN film is considered to be approximately 120 nm [6]. Fig.…”

Electronic structure and impurity states of S-doped cBN: A first-principle study

“…However, due to the difficulty of growing high quality cBN films and large size cBN single crystals, there are still few groups in number that can make high quality cubic phase boron nitride [2][3][4][5][6][7][8][9], let alone high quality n-or p-type doped cBN that can be used to fabricate excellent performance electronic devices. In the experimental aspect, Taniguchi et al [10][11][12][13], one of the famous groups that have synthesized large size cBN single crystals successfully, reported various characteristics of n-and p-type cBN single crystal doped with S, Be, Eu and Tb.…”

Synthesis of BN nanocrystals under hydrothermal conditions

“…One route is the hightemperature and high-pressure synthesis method [14][15][16][17], and the other one is the chemical vapor deposition method [18][19][20]. However, the former route suffers from some disadvantages: such as, (1) high input and low output, (2) difficult insitu control of the temperature and pressure, (3) is not applicable to the growth of bulk BN crystals, etc.…”