High quality AlN for deep UV photodetectors

Abstract

We have prepared large-area, 0.50×0.55mm2, metal-semiconductor-metal photodetectors based on AlN layers with different density of inversion domains (IDs). AlN layers were grown on (0001) sapphire substrates using gas source molecular beam epitaxy. The introduction of AlN∕GaN short period superlattices after growth of AlN nucleation layer yields significant reduction in the ID density. Photodetectors with ID density of 106cm−2 exhibit a very low dark current of 0.5fA at zero bias, which remains below 50fA up to a bias of ±30V. The peak responsivity of 0.08A∕W was obtained at a wavelength of ∼202nm.

Low‐Dimensional Structure Vacuum‐Ultraviolet‐Sensitive (λ < 200 nm) Photodetector with Fast‐Response Speed Based on High‐Quality AlN Micro/Nanowire

“…Aluminum nitride (AlN) has not only an appropriate band gap of 6.2 eV (ca. 200 nm), but also superior radiation resistance, high thermal and chemical stability, leading it to an ideal material for VUV detection . The key is how to prepare defect‐free and high‐crystalline AlN, which has no defect‐related photoresponse.…”

Hybrid functional study of Si and O donors in wurtzite AlN

“…Due to its many useful characteristics, including a large bandgap of 6.11-6.2 eV, 1,2 high thermal and chemical stability and low electron affinity, aluminium nitride (AlN) is currently being investigated for use in many electronic and optoelectronic devices, including UV detectors 3 and emitters, 4,5 intersubband devices for telecommunications, 6 and radiation/space hard devices. 7 A crucial problem, common to many wide band gap semiconductors, is how to achieve effective n-and p-doping.…”

High quality AlN grown on double layer AlN buffers on SiC substrate for deep ultraviolet photodetectors

“…In spite of the recognition of its outstanding physical properties, so far there have been few demonstrations of AlN as an active DUV optoelectronic device material [23][24][25] due to the lack of high quality AlN epilayers in the past. The 1.0 lm AlN epilayer was utilized to fabricate Schottky photodetector.…”