High-Q Slow-Wave Transmission Line for Chip Area Reduction on Advanced CMOS Processes

Lai, Ivan Chee Hong; Fujishima, Minoru

doi:10.1109/icmts.2007.374481

Cited by 16 publications

(8 citation statements)

References 6 publications

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“…In order to enhance the capacitance per unit length, structures with metal strips above and under the coplanar waveguide line have been also published [8]. Despite all efforts made in [6] and [7], the quality factor does not exceed 8 at 10 GHz.…”

Section: Introductionmentioning

confidence: 99%

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High-Q Slow-Wave Coplanar Transmission Lines on 0.35 $\mu$m CMOS Process

Kaddour

Issa

Franc

et al. 2009

IEEE Microw. Wireless Compon. Lett.

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In this letter, experimental results and trends for shielded coplanar waveguide transmission lines (S-CPW) implemented in a 0.35 m CMOS technology are provided. Because of the introduction of floating strips below the CPW transmission line, high effective dielectric permittivity and quality factor are obtained. Three different geometries of S-CPW transmission lines are characterized. For the best geometry, the measured effective dielectric permittivity reaches 48, leading to a very high slow-wave factor and high miniaturization. In addition, measurements demonstrate a quality factor ranging from 20 to 40 between 10 and 40 GHz, demonstrating state-of-the-art results for transmission lines realized in a low-cost CMOS standard technology.

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Section: Introductionmentioning

confidence: 99%

“…Several derivative configurations of S-CPW transmission lines followed then in more recent publications in order to minimize the structure losses. For example, extended ground metal strips were added in [6]. Besides, metal floating strips realized on the two lowest metal layers connected with vias, were proposed in [7].…”

Section: Introductionmentioning

confidence: 99%

High-Q Slow-Wave Coplanar Transmission Lines on 0.35 $\mu$m CMOS Process

Kaddour

Issa

Franc

et al. 2009

IEEE Microw. Wireless Compon. Lett.

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“…While minimizing the gap to 20 m [4] can resolve the metal density problem, a poor Q-factor and a low relatively permittivity are obtained, because of the relative small value of the capacitance and the inductance per unit length of a transmission line. Another structure characterized by extended metal fingers from the ground planes has been designed in an effort to satisfy the stringent density requirements of CMOS processes [7]. However, the eddy currents in the extended metal fingers diminish the performance of the SWTL.…”

Section: Introductionmentioning

confidence: 99%

A Slow-Wave Microstrip Line With a High-Q and a High Dielectric Constant for Millimeter-Wave CMOS Application

Lee

Park

2010

IEEE Microw. Wireless Compon. Lett.

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A slow-wave microstrip line (S-MSL) designed in 0.13 m CMOS technology with a high-Q and a high dielectric constant is proposed in this letter. Grounded metal strips with two metal layers are located in zigzags in order to prevent penetration of the electric field into the silicon substrate. These metal strips equate the potentials of the ground planes and thus eliminate the parasitic coupled slotline mode without requiring additional air-bridges. Also, locating the ground planes in the SiO 2 layers instead of on the top metal reduces the size of the gap between the signal line and ground planes relative to the conventional structure. This allows relaxation of the metal density rule of the CMOS processes. Measured results for the proposed S-MSL show that the relative permittivity is 25 and the quality factor ranges from 18 to 37.7 between 20 and 60 GHz. The wavelength of the measured 253 m S-MSL is 4 at 60 GHz. Index Terms-CMOS, coplanar waveguide (CPW), millimeter-wave, slow-wave microstrip line, slow-wave transmission line (SWTL).

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“…This is called the slowwave phenomenon. The slow-wave theory in the microwave range has been investigated with most grounded slow-wave structures [22]- [31]. In this paper, a slow-wave CPW transmission line, combining the advantages of both CPW transmission lines and MS lines, is proposed to create high-performance passive components for MMIC chips.…”

Section: Introductionmentioning

confidence: 99%

High-Performance Slow-Wave Transmission Lines With Optimized Slot-Type Floating Shields

Cho

Yeh

Liu

et al. 2009

IEEE Trans. Electron Devices

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A novel slow-wave transmission line with optimized slot-type floating shields in advanced CMOS technology is presented. Periodical slot-type floating shields are inserted beneath the transmission line to provide substrate shielding and to shorten the electromagnetic (EM) propagation wavelength. This is the first study that demonstrates how the wavelength, attenuation loss, and characteristic impedance can be adjusted by changing the strip length (SL), strip spacing (SS), and metal layer position of the slottype floating shields. Wavelength shortening needs to be achieved with a tradeoff between slow-wave effect and attenuation loss. The slot-type floating shields with different SLs, SSs and metal layer positions are analyzed. It is concluded that minimum SL provides the most optimal result. A design guideline can be established to enable circuit designers to reach the most appropriate slot-type floating shields for optimal circuit performance. Transmission line test structures were fabricated by using 45-nm CMOS process technology. Both measurement and EM waves simulation were performed up to 50 GHz. Transmission lines are frequently used at a length of half-or quarter-wavelength. With a shortened wavelength, a saving in silicon area of more than 67% can be achieved by using optimized slot-type floating shields. Experimental results demonstrated a higher effective relative permittivity value, which is improved by a factor of more than 9, and a better quality factor, which is improved by a factor of more than 6, as compared to conventional transmission lines.

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High-Q Slow-Wave Transmission Line for Chip Area Reduction on Advanced CMOS Processes

Cited by 16 publications

References 6 publications

High-Q Slow-Wave Coplanar Transmission Lines on 0.35 $\mu$m CMOS Process

High-Q Slow-Wave Coplanar Transmission Lines on 0.35 $\mu$m CMOS Process

A Slow-Wave Microstrip Line With a High-Q and a High Dielectric Constant for Millimeter-Wave CMOS Application

High-Performance Slow-Wave Transmission Lines With Optimized Slot-Type Floating Shields

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