High Q multilayer spiral inductor on silicon chip for 5/spl sim/6 GHz

Abstract

High Q-values of spiral inductors at frequency around 5 6 GHz have been achieved with a multilayer spiral (MLS) structure on a high loss silicon substrate. Compared to a one-layer spiral (OLS) inductor, the Q-value of a 4-nH inductor has been improved by about 80% at 5.65 GHz. The impact of the structure on Q-value and resonant frequency has been analyzed, which shows that an optimal height for the via of MLS inductors should be considered when inductors are designed. The fabrication process is compatible with Cu/SiO 2 interconnect technology.Index Terms-CMOS interconnect technology, multilayer spiral inductors, wireless LAN.

On-Chip Spiral Inductors and On-Chip Spiral Transistors for Accurate Numerical Modeling

“…S parameters are frequently used for networks operating at radio frequency and microwave frequencies where signal power and energy concerns are simply quantified and compared to currents and voltages. S parameters change with the measurement frequency, so frequency must be specified for any S parameter measurements stated [9,10]. This work uses simulation model based on dividing the geometry of the inductors and transistors into the segmented elements of an interface network that includes line spacing, line width, and number of turns.…”

Spiral inductors for V-band wireless ICs

“…The current trend in the wireless communication research is towards 60GHz band with large block of unlicensed spectrum and higher maximum power transmission as motivating factors [3][4][5]. Till recently, investigations of the spiral inductors up to 30GHz [6][7][8][9] were sufficient as most of the wireless applications were confined to frequencies less than 30GHz [3]. As we move towards V-band wireless applications it is essential to know more about the spiral inductors to exploit them to gain higher quality factor and minimize the area occupied.…”

Modeling, optimization and performance of high-Q MEMS solenoid inductors

“…In many radio frequency integrated circuit (RFIC) components, the passive inductor plays a very important role in RF circuit used in or as onchip matching network, inductive load, passive filter, voltage-controlled oscillator (VCO), RF power amplifiers, radio transmitters, etc. According to their geometries, the integrated inductors can be divided into three groups: meander-type (Ahn et al 1996;Yoon et al 2003;Dahlmann et al 2002), spiral-type (Soyuer et al 1995;Burghartz 1996;Ribas et al 2000;Lihui et al 2002;Jiang et al 2003;Wang et al 2004) and solenoid-type (Zou et al 2003;Kim and Allen 1998;Liang et al 2002;Yoon et al 1998Yoon et al , 1999Zhuang et al 2003). Compared to spiral inductors, solenoid inductors should have advantages because the main electromagnetic flux is parallel to the substrate surface and thus substrate losses are potentially minimal.…”