High-$Q$ Integrated CMOS-MEMS Resonators With Deep-Submicrometer Gaps and Quasi-Linear Frequency Tuning

Chen, Wen-Chien; Fang, Weileun; Li, Sheng-Shian

doi:10.1109/jmems.2012.2189360

Cited by 32 publications

(18 citation statements)

References 19 publications

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“…Performance mechanical coupling [2], as shown in Fig. 10, with their non-CMOS-MEMS counterparts [1].…”

Section: Phase [Degree]mentioning

confidence: 99%

“…15 and indicating the near-zero TC f is plausible once the ratio between SiO 2 and metal is optimized. Thus, the use of SiO 2 as part of the composite structures in CMOS-MEMS resonators brings an easy and effective temperature compensation scheme [2].…”

Section: A Passive Temperature Compensationmentioning

confidence: 99%

“…The resonance frequency of capacitivetype MEMS resonators can be tuned via their dc-bias voltages through the electrical stiffness; however, the change of motional impedance as well as the parabolic relationship between the bias voltage and frequency makes such a postfabrication trimming technique not suitable for real implementation. To solve this issue, we proposed a quasilinear frequency tuning via the adjustment of an independent bias voltage [2] without consuming any dc power, showing 5,000 ppm tuning range and sensitivity of 83.3 ppm/V, as shown in Fig. 17(a).…”

Section: Frequency Tuningmentioning

confidence: 99%

“…1, this paper reviews several generalized platforms utilizing the foundry CMOS technologies [2], showing several unique features, such as ease of use, low cost, fast turnaround time, and innate MEMS-circuit integration.…”

Section: Introductionmentioning

confidence: 99%

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CMOS-MEMS resonators and their applications

2013

2013 Joint European Frequency and Time Forum &Amp; International Frequency Control Symposium (EFTF/IFC)

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This paper reports on the recent progress of the high-Q integrated micromechanical resonator, oscillator, and filter using the "CMOS-MEMS technology" to enable monolithic integration of MEMS and IC. The paper scope covers three major parts, including (i) the fabrication technologies of the CMOS-MEMS resonators and their associated circuitry; (ii) the performance enhancement of the resonators on motional impedance, quality factor, power handling, thermal stability, frequency tuning, and parasitic feedthrough; (iii) the implementation of the CMOS-MEMS resonators for frequency generation (i.e., oscillators) and frequency selection (i.e., filters) functionalities. In the first part, various fabrication technologies in the 0.35m and 0.18m CMOS technology nodes are presented, showing their own features and advantages. In the second part, several strategies in design aspects and material point of views were proposed to enhance the performance of the CMOS-MEMS resonators. In the last part, designs and experimental results of the CMOS-MEMS oscillator and filter are presented. We take full advantage of the IC and semiconductor strength in Taiwan to develop several CMOS-MEMS resonator platforms towards single-chip implementation for timing reference, oscillator, filter, and sensor applications.

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“…Performance mechanical coupling [2], as shown in Fig. 10, with their non-CMOS-MEMS counterparts [1].…”

Section: Phase [Degree]mentioning

confidence: 99%

Section: A Passive Temperature Compensationmentioning

confidence: 99%

Section: Frequency Tuningmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

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CMOS-MEMS resonators and their applications

2013

2013 Joint European Frequency and Time Forum &Amp; International Frequency Control Symposium (EFTF/IFC)

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“…In this device, a pull-in technique depicted in Fig. 3 has been used, which is a prime method adapted for gap reduction to reduce motional impedance by an order of magnitude [11] [12]. Fig.…”

Section: Device Operationmentioning

confidence: 99%

A fully-differential CMOS-MEMS resonator integrated with an on-chip amplifier

Pachkawade

2012

2012 IEEE Sensors

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A fully-differential CMOS-MEMS ring resonator integrated with a differential-type transimpedance amplifier (TIA) has been demonstrated using a commercially available CMOS process with 30-dB feedthrough suppression as compared to its singled-ended counterparts. To achieve such performance, the flexural-mode ring resonator with a desired mode shape features an inherent differential mode of mechanical operation, therefore not only enabling feedthrough (i.e., common-mode) signal cancellation to attain a clean frequency characteristic of the motional signal but attaining high Q due to its symmetrical structure and nodal support design. The nodal locations of the ring can be precisely accessed by the supporting beams due to its geometrical symmetry by which the process variation would not affect the motionless positions of the ring, therefore assuring low vibration energy loss and high Q. In addition, the on-chip differential TIA provides both the signal gain and impedance matching to further enhance the transmission of the motional current for future single-chip oscillator implementations. As a result, such a CMOS-MEMS ring resonator together with its on-chip circuitry offers a potential benefit from capacitive feedthrough cancelation by means of differential signaling scheme. Theoretical predications and simulations are in good agreement with the experimental demonstration.

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MEMS Using CMOS Wafer

Fang

Chiu

et al. 2021

3D and Circuit Integration of MEMS

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High-$Q$ Integrated CMOS-MEMS Resonators With Deep-Submicrometer Gaps and Quasi-Linear Frequency Tuning

Cited by 32 publications

References 19 publications

CMOS-MEMS resonators and their applications

CMOS-MEMS resonators and their applications

A fully-differential CMOS-MEMS resonator integrated with an on-chip amplifier

MEMS Using CMOS Wafer

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