High-Q FBAR filters in a wafer-level chip-scale package

Ruby, R.; Barfknecht, A.T.; Han, Cheng-Nan; Desai, Y.; Geefay, F.; Gan, Gongwen; Gat, Moshe; Verhoeven, T.

doi:10.1109/isscc.2002.992997

Cited by 46 publications

(14 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Single-ended to differential micromechanical filters with large stop band rejection are ideal replacements for conventional SAW and FBAR filters [16,17] in Fully differential mechanical filters can be operated in single-ended to differential mode by providing only one of two input signals to actuate the filter. However, this method is not optimal since half of the drive electrode area is not utilized, resulting in a higher-than-necessary input motional impedance (R X ).…”

Section: Balanced-unbalanced Mems Filtermentioning

confidence: 99%

The Resonant Body Transistor

2010

View full text Add to dashboard Cite

Cornell University 2009With quality factors (Q) often exceeding 10,000, vibrating micromechanical resonators have emerged as leading candidates for on-chip versions of high-Q resonators used in wireless communications systems, sensor networks, and clocking sources in microprocessors. However, extending the frequency of MEMS resonators generally entails scaling of resonator dimensions leading to increased motional impedance. In this dissertation, I introduce a new transduction mechanism using dielectric materials to improve performance and increase frequency of silicon-based RF acoustic resonators.Traditionally, electrostatically transduced mechanical resonators have used air-gap capacitors for driving and sensing vibrations in the structure. To increase transduction efficiency, facilitate fabrication, and enable GHz frequencies of operation, it is desirable to replace air-gap transducers with dielectric films.In my doctoral work, I designed, fabricated, and demonstrated dielectrically transduced silicon bulk-mode resonators up to 6.2 GHz, marking the highest acoustic frequency measured in silicon to date. The concept of internal dielectric transduction is introduced, in which dielectric transducers are incorporated directly into the resonator body. With dielectric films positioned at points of maximum strain in the resonator, this transduction improves in efficiency with increasing frequency, enabling resonator scaling to previously unattainable frequencies. Using internal dielectric transduction, longitudinal-mode resonators exhibited the highest frequency-quality factor ( f Q) product in silicon to date

show abstract

Section: Balanced-unbalanced Mems Filtermentioning

confidence: 99%

The Resonant Body Transistor

2010

View full text Add to dashboard Cite

show abstract

“…Electrostatic actuation is the most prevalent technique in use today due to its virtually zero power consumption, small electrode size, thin layers used, rela- [3], (b) University of Michigan micromachined membrane filter [2], (c) SEM of Radant MEMS switch [5], and (d) a two-pole 7-MHz filter based on micromechanical resonators [4].…”

Section: Rf Mems Configurationsmentioning

confidence: 99%

“…FBAR (thin film bulk acoustic resonators) and filters that use acoustic vibrations in thin films and that have demonstrated excellent performance up to 3 GHz with very high Q (>2000). Recently, FBAR technology resulted in miniature low-loss filters for wireless applications [3].…”

mentioning

confidence: 99%

Introduction: RF MEMS for Microwave Applications

Rebeiz¹,

Tan

2003

Rf Mems

View full text Add to dashboard Cite

THE BEGINNING OF RF MEMSMicroelectromechanical Systems (MEMS) have been developed since the 1970s for pressure and temperature sensors, accelerometers, gas chromatographs, and other sensor devices. MEMS switches for low-frequency applications have also been demonstrated in the early 1980s but remained a laboratory curiosity for a long time. They are essentially miniature devices that use a mechanical movement to achieve a short circuit or an open circuit in a transmission line. But in 1990But in -1991, under the support of DARPA (Defense Advanced Research Projects Agency), Dr. Larry Larson at the Hughes Research Labs in Malibu, California, developed the first MEMS switch (and varactor) that was specifically designed for microwave applications [1]. However, and as usual with any leap in technology, it was far from mature and had poor yield and virtually no reliability. Still, it demonstrated excellent performance up to 50 GHz, far better than anything that could be achieved with GaAs devices.The initial results of Larson were so outstanding that they stirred the interest of several groups in the U.S. government; and by 1995, Rockwell Science Center and Texas Instruments both had developed an outstanding RF MEMS switch. The Rockwell switch was a metal-to-metal contact type, suitable for DC-60 GHz applications, while the Texas Instruments switch was a capacitive contact switch, suitable for 10-120 GHz applications. The rest is history; by 1998, the University of Michigan, The University of California, Berkeley, Northeastern University, MIT Lincoln Labs, Columbia University, Analog Devices, Northrup Grumman, and several other companies were actively pursuing RF MEMS devices. By 2001, there were more than 30 companies work-

show abstract

“…The basic configuration of a BAW (Bulk Acoustic Wave) resonator is a piezoelectric thin film surrounded by two metal electrodes [43,44,45,46,47,48,49,50,51,52]. Fig.…”

Section: Piezoelectric Resonatorsmentioning

confidence: 99%

“…FBAR resonators can offer Q-factors in the range of 1k [43,44,45,46,47,48,49,50,52,53]. In [43], a duplexer based on FBAR resonators was fabricated working at 1900 MHz (the PCS band), which was 10 times smaller than its off-chip counterpart and it was better than a SAW duplexer in terms of power handling [46,47,48].…”

Section: Piezoelectric Resonatorsmentioning

confidence: 99%

Active N-path Filters: Theory and Design

Darvishi¹

View full text Add to dashboard Cite

High-Q FBAR filters in a wafer-level chip-scale package

Cited by 46 publications

References 2 publications

The Resonant Body Transistor

The Resonant Body Transistor

Introduction: RF MEMS for Microwave Applications

Active N-path Filters: Theory and Design

Contact Info

Product

Resources

About