High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method

Jenny, Jason R.; Müller, S.; Powell, Adrian R.; Tsvetkov, V. F.; Hobgood, H. McD.; Glass, R. C.; Carter, C. H.

doi:10.1007/s11664-002-0084-9

Cited by 72 publications

(40 citation statements)

References 14 publications

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“…It seems that intrinsic deep levels play a leading role in the high resistivity compensation of high-purity SI SiC (a resistivity of more than 10 10 ⍀cm at RT) grown by sublimation. 5 However, several deep levels in the energy band gap have been measured and diverse activation energies of the resistivity were determined for one and the same deep level. In order to grow reliable and reproducible SI material, the compensation mechanism in SiC has to be well understood.…”

Section: Introductionmentioning

confidence: 99%

Effect of boron on the resistivity of compensated 4H-SiC

Ciechonski

Syväjärvi

Kakanakova‐Georgieva

et al. 2003

Journal of Elec Materi

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High-resistivity 4H-SiC samples grown by sublimation with a high growth rate are studied. The measurements show resistivity values up to a high of 10 4 ⍀cm. The secondary ion mass spectroscopy (SIMS) results revealed a presence of only common trace impurities such as nitrogen, aluminum, and boron. To understand the compensation mechanism in these samples, capacitance deep-level transient spectroscopy (DLTS) on the p-type epilayers has been performed. By correlation between the growth conditions and SIMS results, we apply a model in which it is proposed that an isolated carbon vacancy donorlike level is a possible candidate responsible for compensation of the shallow acceptors in p-type 4H-SiC. A relation between cathodoluminescence (CL) and DLTS data is taken into account to support the model.

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Section: Introductionmentioning

confidence: 99%

Effect of boron on the resistivity of compensated 4H-SiC

Ciechonski

Syväjärvi

Kakanakova‐Georgieva

et al. 2003

Journal of Elec Materi

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“…The high peaking temperature of E centers implies a high activation energy, possibly close to the middle of the bandgap. The trap centers with activation energies close to the middle of the bandgap were reported for the as-grown 4H-SiC epitaxial layers 21,22 and the high purity bulk SI 4H-SiC 11,23,24 and were attributed to intrinsic defects and their complexes.…”

Section: B Tsc Measurements Of Si Epitaxial Layermentioning

confidence: 69%

Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy

Muzykov

Krishna

Mandal

2012

Journal of Applied Physics

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We have investigated deep level centers in n-type and semi-insulating (SI) 4H-SiC epitaxial layers by thermally stimulated current (TSC) spectroscopy. The epitaxial layers were grown using chemical vapor deposition utilizing a dichlorosilane precursor. Both epitaxial layers exhibited relatively shallow levels related to Al, B, L- and D-centers. A deep level center with an activation energy of 1.1 eV, peaked at ∼400 K, was detected in the n-type epitaxial layer and correlated with the IL2 level and the 1.1 eV center in a high purity bulk SI 4H-SiC. The TSC spectra of the SI epitaxial layer was dominated by the peaks at 525–585 K that we attributed to intrinsic defects and their complexes with energy levels close to the middle of the bandgap. The TSC spectra of SI epitaxial layer exhibited peaks with different current polarity which is explained by thermoelectric effect and the built-in electric field reversal. The results of the transfer length method measurements of the SI epitaxial layer and the room temperature current-voltage (I-V) characteristics of both epitaxial layers are also reported.

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“…Compensation of residual impurities in the SI material has been achieved either by introducing vanadium 1,2 or, more recently, by introducing intrinsic defects. 3 A carbon vacancy related defect, referred to here simply as V C , was detected in as-grown SiC by EPR 4 and is thought to participate in compensation. 3,5 Because high-temperature applications motivate the production of SiC-based electronics, the behavior of the impurities and intrinsic defects at elevated temperatures must be understood.…”

Section: Introductionmentioning

confidence: 99%

“…3 A carbon vacancy related defect, referred to here simply as V C , was detected in as-grown SiC by EPR 4 and is thought to participate in compensation. 3,5 Because high-temperature applications motivate the production of SiC-based electronics, the behavior of the impurities and intrinsic defects at elevated temperatures must be understood. Unfortunately, most annealing studies have been performed on material damaged by irradiation; thus, the results may not apply to as-grown samples.…”

Section: Introductionmentioning

confidence: 99%

Effects of high-temperature annealing on defects and impurities in As-grown semi-insulating 4H SiC

Álvarez

Konovalov

Zvanut

2003

Journal of Elec Materi

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This work investigates the thermal stability of point defects in high-purity SiC. Electron paramagnetic resonance measurements made after Ar annealing between 600°C and 1700°C reveal changes in at least two defects, a carbon vacancy related center (V C ) and the shallow boron acceptor. Between 1000°C and 1400°C, the number of carbon vacancies decreased and the number of boron acceptors increased in about the same proportion. Above 1400°C, the concentration of B continued to grow, while the number of carbon vacancies fell below the detection limit. After the highest temperature anneal, the initial preannealed concentration of V C was restored by illumination with sub-bandgap 578-nm light. The effects of heat treatment between 1000°C and 1400°C are interpreted in terms of the charge exchange between a compensated B acceptor and V C . The observation of optically induced carbon vacancies after the final anneal suggests that they are thermally stable in these samples up to 1700°C.

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High-purity semi-insulating 4H-SiC grown by the seeded-sublimation method

Cited by 72 publications

References 14 publications

Effect of boron on the resistivity of compensated 4H-SiC

Effect of boron on the resistivity of compensated 4H-SiC

Characterization of deep levels in n-type and semi-insulating 4H-SiC epitaxial layers by thermally stimulated current spectroscopy

Effects of high-temperature annealing on defects and impurities in As-grown semi-insulating 4H SiC

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