High-productivity immersion scanner enabling 1xnm hp manufacturing

Shirata, Yosuke; Shibazaki, Yuichi; Kosugi, Junichi; Kikuchi, Takahisa; Ohmura, Yasuhiro

doi:10.1117/12.2011123

Cited by 6 publications

(3 citation statements)

References 4 publications

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“…Many factors can affect the overlay, including the nonlinear deformation of wafers, the expansions of reticles by heating during exposure, and thermal aberrations in the PO. As the PO has many movable lens elements intended to control distortion, the synchronous motion of these lenses during scanning allows compensation for various intra-field distortions (Shirata et al 2013). In the MP age, not only the alignment accuracy but also the CD accuracy can affect the final pattern, Fig.…”

Section: Multiple Patterning (Mp)mentioning

confidence: 99%

Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

Suzuki¹

2020

Handbook of Laser Micro- And Nano-Engineering

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Semiconductor lithography currently provides a resolution close to 10 nm, with the aim of producing extremely fine patterning. Over the last decade, lithography techniques have progressed from ArF immersion to multiple patterning to extreme ultraviolet lithography (EUVL) operating at a wavelength of 13.5 nm. During this period, the first-generation lithography devices were immersion systems and achieved 40 nm resolution through a 1.35 numerical aperture (NA) projection lens in conjunction with an ArF laser (operating at 193 nm) and water immersion. To make full use of the capability of the projection lens, A. Suzuki (*) Head quarter, AS Lithography Consulting

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Section: Multiple Patterning (Mp)mentioning

confidence: 99%

Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

Suzuki¹

2020

Handbook of Laser Micro- And Nano-Engineering

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“…Recent exposure apparatus includes a two-dimensional digital imaging sensor utilizing wideband white light, which has little sensitivity to variations in the resist thickness. [25][26][27][28][29][30] The experimental and theoretical confirmation of the FWM metrology concept in the latest ArF exposure apparatus are topics for future research.…”

Section: Embedment To Feedback System Of Exposure Apparatusmentioning

confidence: 99%

Accuracy of focus wedge mark measurement using fitting function for partially coherent illumination

Yashiki¹,

Suwa²,

Takeuchi³

2015

Jpn. J. Appl. Phys.

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The theory of best focus determination in focus wedge mark (FWM) metrology is extended from coherent illumination to partially coherent illumination. Through a theoretical analysis, we propose a focus curve fitting function suitable for the FWM, which is expressed by the sinc function. The experimental results for best focus estimations using two types of fitting functions, which are a conventional quadratic polynomial and the proposed sinc function, are reported for various defocus regions to be fitted. When the first inflection points of the sinc function are included in the fitting defocus region, we can achieve stable best focus estimation within 3 nm in our i-line exposure experiments.

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“…The measurement is usually performed with an exposure apparatus equipped with a laser spot sensor employing a monochromatic wavelength, 14) but recently we have employed a two-dimensional digital imaging sensor utilizing wideband white light, which has little sensitivity to variations in the resist thickness. [25][26][27][28][29][30] Both of these sensors detect the tip of the FWM on the resist and determine the length using several algorithms. The thinnest point of the resist is at the tip, and this three-dimensional structure can sometimes lead to an undesirable optical interference phenomenon in the laser spot measurement and increase the uncertainty in the FWM length measurement.…”

Section: Measurement Accuracymentioning

confidence: 99%

Theoretical analysis of focus wedge mark for best-focus determination in photolithography

Suwa¹,

Yashiki²,

Hirukawa³

2014

Jpn. J. Appl. Phys.

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The focus wedge mark (FWM), a periodic array of wedge shaped marks, is a tool used to determine the best-focus position in photolithography. Here, we develop a one-dimensional physical model for the FWM and analyze the focus dependence of the wedge length under coherent imaging conditions. The amplification factor of the FWM, which describes the superiority of the FWM compared to measurements based on line and space marks, is determined by the geometrical magnification of the wedge. We show that around the exposure dose energy typically used in lithography the amplification factor is much higher than the geometrical magnification. Numerical lithography simulations confirm that the focus sensitivity of the FWM is much higher than that of a line and space pattern.

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High-productivity immersion scanner enabling 1xnm hp manufacturing

Cited by 6 publications

References 4 publications

Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

Advances in Optics and Exposure Devices Employed in Excimer Laser/EUV Lithography

Accuracy of focus wedge mark measurement using fitting function for partially coherent illumination

Theoretical analysis of focus wedge mark for best-focus determination in photolithography

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