High-pressure synthesis and excellent thermoelectric performance of Ni/BiTeSe magnetic nanocomposites

Abstract

Superparamagnetic Ni nanoparticles remarkably enhance the room-temperature thermoelectric and cooling performance of n-type BiTeSe alloys.

In‐Situ Loading Bridgman Growth of Mg3Bi1.49Sb0.5Te0.01 Bulk Crystals for Thermoelectric Applications

“…e) Photograph of the configured single‐leg TE device based on the Mg 3 Bi 1.49 Sb 0.5 Te 0.01 polycrystalline material prepared above. f) Δ T max measured for the single‐leg device under various supplied current, and data from the references at the same current were compared (commercial Bi 0.5 Sb 1.5 Te 3 , Sn 0.91 Pb 0.09 Se, SnTe, [ 39 ] Bi 0.3 Sb 1.7 Te 3 , [ 40 ] Bi 2 Te 2.7 Se 0.3 [ 41 ] ).…”

“…This result is much superior to the data obtained for the commercial Bi 2 Te 3 ‐based alloys or optimized TE materials in references measured at the same current, e.g., 3.5 K of Sn 0.91 Pb 0.09 Se, [ 39 ] 7.9 K of Bi 0.3 Sb 1.7 Te, [ 40 ] and 9.3 K of Bi 2 Te 2.7 Se 0.3 . [ 41 ]…”

Magneto-enhanced electro-thermal conversion performance

“…Since then, magnetism has been regarded as a new degree of freedom to tailor electron and phonon transport in TE materials [26,[28][29][30]. Now the electron multiple scattering effect induced by superparamagnetism has been widely used not only in the low-temperature Bi 2 Te 3 alloys [31,32], but also in the middle-temperature TE materials with best TE performance in the range of 200-500°C, such as Cu 2 ZnSnS 4 [33], and Ba 0.3 In 0.3 Co 4 Sb 12 [25]. The electron repository effect, which traps electrons below Curie temperature and releases electrons above Curie temperature, has been discovered to be effective for middle-temperature TE materials such as Ba 0.3 In 0.3 Co 4 -Sb 12 [24] and half-Heusler alloys [26].…”

A Review on Doped/Composite Bismuth Chalcogenide Compounds for Thermoelectric Device Applications: Various Synthesis Techniques and Challenges

“…154 The influence of the density of states and microstructure decomposition of spinodal microscale on water-quenched 0.1 wt.% PbTe was investigated by Jaquat et al 155 The cooling rate modified fundamental properties like electrical resistivity and thermal conductivity. As a result, the obtained ZT of PbTe was found to be 0.8 at 300 K. The thermoelectric properties of Cu-doped p-type Bi 0.5 Sb 1.5 Te 3 were investigated to determine the intrinsic excitation effect in BST material, resulting in the highest ZT of 1.0 at 450 K. 156 The layered compound BiMnTe 4 was found to be a p-type semiconductor with a high Seebeck coefficient at 300 K (168 μV∕K ). Also, in nanostructured Bi 2 Te 3 /MnTe 2 , the ZT was found to be 0.26 at 480 K. 157 The sintered bulk materials of p-type Bi 0.52 Sb 1.48 Te 3 prepared using melt spinning and rapid sintering were found to depend on thermal conductivity of ambient gases with enhancement in ZT value of about 1.09 at 340 K. 158 To control the crystallographic preferred orientation, melt spinning method has been applied for CHI 3 -doped Bi 2 Te 2.4 Se 0.6 alloys with an optimized frequency of 300 rpm with ZT of 1.02 at 400 K. 119 The outstanding homogeneity and reproducibility by varying the stoichiometry have played a crucial role in the transport properties of p-type Bi x Sb 2−x Te 3 prepared by melt spinning.…”