High pressure photoluminescence and resonant Raman study of GaAs

Yu, Peter Y.; Welber, B.

doi:10.1016/0038-1098(78)90214-4

Cited by 98 publications

(27 citation statements)

References 7 publications

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“…We found conduction-band inversion at pressure P 0 ¼7.7 GPa. Experimental values for the pressure P 0 at which the conduction-band inversion occurs are 3.5 GPa [18] and 3 GPa [19], but other theoretical calculations give a value about 7.3 GPa [17]. The discrepancy between our calculated value and the measured one is attributed to the GGA approximation.…”

Section: Effect Of Hydrostatic Pressurecontrasting

confidence: 71%

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Pressure and composition dependence of structural, electronic and optical properties of GaAsBi alloys

Alaya

Mbarki

Rebey

2015

Materials Science in Semiconductor Processing

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Section: Effect Of Hydrostatic Pressurecontrasting

confidence: 71%

“…Due to its technological importance in various application domains, the properties of GaAs have been the subject of several experimental and theoretical studies under pressure [17][18][19]. However, the pressure dependence of the electronic properties of the GaAsBi ternary alloys has not been investigated till now.…”

Section: Introductionmentioning

confidence: 99%

Pressure and composition dependence of structural, electronic and optical properties of GaAsBi alloys

Alaya

Mbarki

Rebey

2015

Materials Science in Semiconductor Processing

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“…22 Our value of 140 meV is consistent with the observation that the oscillatory magnetoabsorption spectra of bulk InSb crystals in ref 23 begin to lose structure at the energies of ∼150À200 meV above the Γ-point conduction band bottom at 1.8 K. This is in line with the previous studies showing that the energy gap between direct and indirect valleys in IIIÀV semiconductors decreases with reduction of lattice constant at low temperature or high pressure. 24 Our experimental data suggest strongly that in the low temperature STS measurements of the InSb QDs, the electrons tunnel via the L-point conduction band states. This could occur because the tunneling through the L-point of Brillioun zone is more efficient than the tunneling through the Γ-point.…”

mentioning

confidence: 91%

Size-Dependent Energy Levels of InSb Quantum Dots Measured by Scanning Tunneling Spectroscopy

Wang

Vaxenburg²,

Liu³

et al. 2014

ACS Nano

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The electronic structure of single InSb quantum dots (QDs) with diameters between 3 and 7 nm was investigated using atomic force microscopy (AFM) and scanning tunneling spectroscopy (STS). In this size regime, InSb QDs show strong quantum confinement effects which lead to discrete energy levels on both valence and conduction band states. Decrease of the QD size increases the measured band gap and the spacing between energy levels. Multiplets of equally spaced resonance peaks are observed in the tunneling spectra. There, multiplets originate from degeneracy lifting induced by QD charging. The tunneling spectra of InSb QDs are qualitatively different from those observed in the STS of other III-V materials, for example, InAs QDs, with similar band gap energy. Theoretical calculations suggest the electron tunneling occurs through the states connected with L-valley of InSb QDs rather than through states of the Γ-valley. This observation calls for better understanding of the role of indirect valleys in strongly quantum-confined III-V nanomaterials.

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“…As it is known from photoluminescence investigations on GaAs, the carriers attain a temperature much higher than that of the lattice. 12 It is noteworthy that the emission takes place according to the straightforward principle of detailed balance since CdS is known to show peculiar emission features far from the ideal case. 13 As shown in Figs.…”

mentioning

confidence: 99%

Two-photon-excited green emission and its dichroic shift of oriented thin-film CdS on glass formed by laser deposition

Ullrich

Schroeder

Sakai

et al. 2002

Applied Physics Letters

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The photoluminescence of oriented thin-film CdS on glass formed by laser deposition was investigated employing 200 fs, 1.54 eV laser pulses at room temperature. The ultrafast excitation caused a two-photon absorption process, which results in purely green emission at the band gap. The spectra are fitted very well by the application of the van Roosbroeck–Shockley relation, density of states, and Urbach’s rule demonstrating the intrinsic character of the radiative recombination. It is further shown that the energy position of the emission peak depends on the polarization of the impinging laser beam due to the dichroism of the highly oriented films.

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High pressure photoluminescence and resonant Raman study of GaAs

Cited by 98 publications

References 7 publications

Pressure and composition dependence of structural, electronic and optical properties of GaAsBi alloys

Pressure and composition dependence of structural, electronic and optical properties of GaAsBi alloys

Size-Dependent Energy Levels of InSb Quantum Dots Measured by Scanning Tunneling Spectroscopy

Two-photon-excited green emission and its dichroic shift of oriented thin-film CdS on glass formed by laser deposition

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