High-pressure phase transition and phase diagram of gallium arsenide

Besson, Jean; Itié, J. P.; Polian, A.; Weill, G.; Mansot, Jean-Louis; González, J.

doi:10.1103/physrevb.44.4214

Cited by 180 publications

(140 citation statements)

References 36 publications

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“…However, the Raman spectrum of the DZ phase would rather resemble that of the first-order one-phonon density of states of the zinc blende phase because disorder of cations and vacancies at cation sites will promote defect-induced or defect-assisted Raman scattering (DARS) due to the loss of the translational symmetry of the crystal. This Raman activity has been observed in many disordered, nanocrystalline, and pressure-treated compounds; [33][34][35][36] however, as already commented, no Raman scattering similar to a one-phonon density of states of the zinc blende phase has been ever reported to occur at high pressures neither above the pressure range 11-14 GPa in DCCdGa 2 Se 4 nor in other adamantine ternary OVCs at high pressures. 11,12,19,20 In fact, Ursaki et al concluded, from the analysis of their Raman results, 11 that the decrease of the intensity of the A 1 mode above 11 GPa was due to the onset of a second stage of disorder where all cations and vacancies mixed together, thus leading to the DZ phase in good agreement with the theoretically predicted stages of disorder proposed by Bernard and Zunger for OVCs at high temperatures but not for high pressures.…”

Section: -mentioning

confidence: 99%

High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds

Gomis

Vilaplana

Manjón

et al. 2012

Journal of Applied Physics

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High pressure structural stability of BaLiF3 J. Appl. Phys. 110, 123505 (2011) Pressure effects on the transitions between disordered phases in supercooled liquid silicon J. Chem. Phys. 135, 204508 (2011) Microfabrication of controlled-geometry samples for the laser-heated diamond-anvil cell using focused ion beam technology Rev. Sci. Instrum. 82, 115106 (2011) First-principles investigations of elastic stability and electronic structure of cubic platinum carbide under pressure J. Appl. Phys. 110, 103507 (2011) Additional information on J. Appl. Phys. High-pressure optical absorption and Raman scattering measurements have been performed in defect chalcopyrite (DC) CdGa 2 Se 4 up to 22 GPa during two pressure cycles to investigate the pressure-induced order-disorder phase transitions taking place in this ordered-vacancy compound. Our measurements reveal that on decreasing pressure from 22 GPa, the sample does not revert to the initial phase but likely to a disordered zinc blende (DZ) structure the direct bandgap and Raman-active modes of which have been measured during a second upstroke. Our measurements have been complemented with electronic structure and lattice dynamical ab initio calculations. Lattice dynamical calculations have helped us to discuss and assign the symmetries of the Raman modes of the DC phase. Additionally, our electronic band structure calculations have helped us in discussing the order-disorder effects taking place above 6-8 GPa during the first upstroke.

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Section: -mentioning

confidence: 99%

High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds

Gomis

Vilaplana

Manjón

et al. 2012

Journal of Applied Physics

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“…Our method is based on the determination of the local temperature of the NW while heating it with constant laser power at several discrete spots. The local temperature is calculated from the linear relation between temperature and the GaAs TO Raman peak shift, which is given by dν/dT = 0.016 K −1 cm −1 for bulk [13]. It has been shown, that this dependence…”

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confidence: 99%

Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating

Soini

Zardo

Uccelli

et al. 2010

Applied Physics Letters

103

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The thermal properties of freely suspended GaAs nanowires are investigated by applying a method which relies on laser heating and the determination of the local temperature by Raman spectroscopy. In order to determine the values for the thermal conductivity κ, the fraction of the laser power absorbed inside the GaAs nanowire is estimated by numerical simulations. The thermal conductivity of nanowires with homogeneous diameter is found to lie in the range of 8-36 Wm −1 K −1 . The change of the temperature profile in the presence of a tapering was investigated. Furthermore, we discuss the influence of laser heating in ambient conditions on the value of κ.The role of thermoelectrics as a competitive technology is, up to now, inhibited by the interdependences of the relevant material parameters, which determine the thermoelectric figure of merit ZT. Recently, the search for materials with high electrical and low thermal conductivity has increased the interest in nanoscale systems for thermoelectric application [1]. Nanowires (NWs) are promising candidates for the reduction of the thermal conductivity due to increased boundary scattering, while keeping the electrical conductivity relatively high [2][3][4][5][6].In this work we investigate the thermal conductivity κ of GaAs NWs. Our method is based on the laser heating of freely suspended NWs and the determination of the local temperature by micro-Raman spectroscopy. The conductivity is found to be significantly lower in NWs than in bulk GaAs. Furthermore, our results confirm recent theoretical calculations by Martin et al. [7].We use zincblende NWs grown by gallium-assisted molecular beam epitaxy, exhibiting very high structural quality [8] and diameters d between 150 and 170 nm. The facets belong to the {110} family and the NW axis corresponds to the [111] direction. The typical Raman spectra obtained from GaAs NWs mainly show the GaAs transverse optical (TO) peak at 268.7 cm −1 (300 K) and a weak peak of the strongly attenuated forbidden longitudinal optical (LO) mode at 292.2 cm −1 [8,9]. The TO peak is of only interest for our work, since the shift of its position provides information about the local temperature. Details about the NW growth and the corresponding properties can be found elsewhere [8,[10][11][12].The NWs are transferred by dropcasting to a silicon substrate containing large arrays of irregularly shaped gold pads of ≈ 3 µm radius. The pads are 300 nm high and are fabricated by e-beam evaporation after a standard photolithographic step. For the measurements we choose NWs which are freely suspended between two pads on a length of 2-4 µm ( see FIG. 1a). The Raman spectra are recorded in backscattering geometry with an XY Dilor triple spectrometer equipped with a multichannel CCD. The 514.5 nm line of an Ar + laser is used for lo- cal heating of the NWs and as excitation for Raman spectroscopy simultaneously. The beam is focused through a 100×, N.A. = 0.95 microscope objective for measurements in air and a 63×, N.A. = 0.75 objective for measurements in ...

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“…High-pressure X-ray experiments 4,5 reveal that GaAs transforms from the fourfoldcoordinated zinc blende (B3) structure (see Figure 1(a)) (GaAs-I) to a sixfold-coordinated (GaAs-II) structure at around 11.5-13.5 GPa 5 and 17 GPa 4 . GaAs-II has been proposed to have the space group Pmm2 4,5 which is a distortion of the rocksalt (B1) structure (see Figure 1(b)).…”

Section: Introductionmentioning

confidence: 99%

“…GaAs have reported different transition pressure values 1,[4][5][6][7][8][9][10]14,15 especially for the B3-B1 phase transition. High-pressure X-ray experiments 4,5 reveal that GaAs transforms from the fourfoldcoordinated zinc blende (B3) structure (see Figure 1(a)) (GaAs-I) to a sixfold-coordinated (GaAs-II) structure at around 11.5-13.5 GPa 5 and 17 GPa 4 .…”

Section: Introductionmentioning

confidence: 99%

“…These studies have clearly shown that materials will exhibit new and interesting phase transitions and novel elastic behavior when subjected to pressure 1 . There has been an enormous amount of theoretical and experimental work on high pressure phases and phase transitions done so far [1][2][3][4][5][6][7][8][9][10][11][12][13][14][15] , especially on GaAs, a binary group III-V semiconductor. This is mainly attributed both to its applications in micro-electronic device fabrications and also its superior operational qualities to Si 11 .…”

Section: Introductionmentioning

confidence: 99%

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Quantum Monte Carlo study of pressure-inducedB3−B1phase transition in GaAs

Ouma¹,

Mapelu

Makau

et al. 2012

Phys. Rev. B

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We have investigated the transition pressure, p t , of bulk GaAs from the zinc blende (B3) to the rocksalt (B1) structure using the local density approximation (LDA), generalized gradient approximation (PBE-GGA) and diffusion Monte Carlo (DMC). We took into account finite temperature effects (zero-point vibrational effects) as well as finite size corrections. Our DMC calculation using GGA trial nodal surface supports the higher value of the transition pressure (∼ 17 GPa) than the lower value of (∼ 12 GPa), both of which are experimentally reported values. This projection increases the transition pressure, p t , from DFT predictions, being of the same tendency as that for Si bulk crystal. The choice of the XC functional in DFT was found to significantly determine the phase transition pressure, while DMC gave more accurate results for this transition pressure.

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High-pressure phase transition and phase diagram of gallium arsenide

Cited by 180 publications

References 36 publications

High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds

High-pressure optical and vibrational properties of CdGa2Se4: Order-disorder processes in adamantine compounds

Thermal conductivity of GaAs nanowires studied by micro-Raman spectroscopy combined with laser heating

Quantum Monte Carlo study of pressure-inducedB3−B1phase transition in GaAs

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