High-pressure phase of GaP: Structure and chemical ordering

Aquilanti, Giuliana; Libotte, H.; Crichton, Wilson A.; Pascarelli, S.; Trapananti, A.; Itié, Jean‐Paul

doi:10.1103/physrevb.76.064103

Cited by 21 publications

(27 citation statements)

References 21 publications

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“…The transition from semiconducting to the metallic phase around 22 GPa has been confirmed repeatedly by previous studies [e.g. 2,6,[10][11][12][13][14][15]. Although the physical properties of GaP at high pressures have been investigated repeatedly, most studies have been performed at ambient temperature.…”

Section: Introductionsupporting

confidence: 58%

“…14]. Later, some studies showed that the proposed β-tin structure was an incorrect interpretation [1,2]. Therefore, we checked the diffraction data of high pressure phase obtained in our experiments.…”

Section: Discussionmentioning

confidence: 98%

“…As pressure increases, this cubic phase transforms to a tetragonal metallic phase, which has the β-tin structure. Recent studies reported that some of the III-V compound semiconductors, such as AlSb, HgSe, InP, and GaP, transformed into the orthorhombic structure (space group Cmcm) [1,2]. The physical properties of the zinc-blende structure in GaP have been studied by X-ray diffraction, resistivity measurements, X-ray absorption, Raman scattering, and ultrasonics [e.g.…”

Section: Introductionmentioning

confidence: 99%

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Determination of the phase boundary of GaP using in situ high pressure and high-temperature X-ray diffraction

Ono

Kikegawa

2017

High Pressure Research

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The high pressure behavior of gallium phosphide, GaP, has been examined using the synchrotron X-ray diffraction technique in a diamond anvil cell up to 27 GPa and 900 K. The transition from a semiconducting to a metallic phase was observed. This transition occurred at 22.2 GPa and room temperature, and a negative dependence of temperature of this transition was found. The transition boundary was determined to be P (GPa) = 22.6 − 0.0014 × T (K).

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Section: Introductionsupporting

confidence: 58%

Section: Discussionmentioning

confidence: 98%

Section: Introductionmentioning

confidence: 99%

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Determination of the phase boundary of GaP using in situ high pressure and high-temperature X-ray diffraction

Ono

Kikegawa

2017

High Pressure Research

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“…The structural phase transition can change the electronic structure, thereby affecting the electrical transport properties. Previous work has also reported a structural phase transition around 39.3 GPa, which the transition was almost completed at 39 GPa . Thus, the discontinuous resistance observed at this point is considered to be due to the structural phase transition.…”

Section: Resultsmentioning

confidence: 99%

Electrical Transport Properties of Gallium Phosphide under High Pressure

Liu

Xiao

et al. 2019

Physica Status Solidi (b)

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The electrical transport properties of gallium phosphide (GaP) under high pressure (up to 50 GPa) are investigated using in situ impedance‐spectrum and Hall‐effect measurements. A discontinuous resistance is observed at 9.9 GPa because of the pressure‐induced grain boundary effect, whereas the pressure‐induced metallization of GaP occurred at ≈24.6 GPa. The metallization transition is determined by measuring the temperature‐dependent resistance and resistivity, and the transition is observed to be reversible. The main cause of the sharp decrease in the resistance and resistivity is a pressure‐induced structural phase transition at 39.3 GPa, as reflected by the measured Hall parameters.

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“…The XANES spectra are also sensitive in the application of pressure. 87.4 Partially amorphous [96,97] The linear combination of spectra can be also used for the determination of the percentage of the low-and high-pressure phases in the pressure region where the phase transition takes place as shown by Besson et al [98].…”

Section: Effect Of Pressurementioning

confidence: 99%

X-Ray Absorption Spectroscopy of Semiconductors

2015

Springer Series in Optical Sciences

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an expanding selection of research monographs in all major areas of optics: lasers and quantum optics, ultrafast phenomena, optical spectroscopy techniques, optoelectronics, quantum information, information optics, applied laser technology, industrial applications, and other topics of contemporary interest. With this broad coverage of topics, the series is of use to all research scientists and engineers who need up-to-date reference books. The editors encourage prospective authors to correspond with them in advance of submitting a manuscript. Submission of manuscripts should be made to the Editor-in-Chief or one of the Editors. See also www.springer.com/series/624More information about this series at

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High-pressure phase of GaP: Structure and chemical ordering

Cited by 21 publications

References 21 publications

Determination of the phase boundary of GaP using in situ high pressure and high-temperature X-ray diffraction

Determination of the phase boundary of GaP using in situ high pressure and high-temperature X-ray diffraction

Electrical Transport Properties of Gallium Phosphide under High Pressure

X-Ray Absorption Spectroscopy of Semiconductors

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