High pressure investigation of ion/molecule reactions in mixtures of ammonia and argon, and pure ammonia

Wójcik, Leszek; Bederski, Krzysztof

doi:10.1016/0168-1176(93)87074-3

Cited by 18 publications

(5 citation statements)

References 28 publications

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“…In the present paper the authors made measurements of the ionmolecule in the propeneargon mixtures by means of quadrupole mass spectrometer with a high--pressure ion source [22]. Relative values of ion currents for the observed ions were determined as a function of the total gas pressure inside the collision chamber of the ion source for dierent mixture compositions.…”

Section: Resultsmentioning

confidence: 99%

“…For all remaining observed ions relative ion currents increase as the propene concentration in the mixture with the argon increase. The C 3 H + 3 ions come from reactions (4), (6) and (8) (5), (13), (15)(17) and (22 (7), (12), (18), (19) and (23). The C 3 H + 6 ions come from the charge-exchange reaction with argon (reaction (9)), mainly.…”

Section: Resultsmentioning

confidence: 99%

“…A quadrupole mass spectrometer with a special high--pressure ion source has been employed to study the ion molecule reactions in the mixtures of propene with argon for the thermal ion energy [21,22]. The primary positive ions were produced in the ionization chamber (of a high pressure ion source) by an electron beam.…”

Section: Methodsmentioning

confidence: 99%

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Mass Spectrometric Study of Positive Ion-Molecule Reactions in the C₃H₆and Ar Mixtures Inside the High Pressure Ion Source

2013

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Ionmolecule reactions have been measured for the propeneargon mixtures of dierent compositions using a quadrupole mass spectrometer with a high-pressure ion source. The concentration of propane in these mixtures ranged from 10% to 90% (at 10% increment). The following primary and secondary ions: CH Relative ion current intensities for primary and secondary ions are presented as a function of both total mixtures pressure and concentration of propene in the mixture. Primary ions were produced by electrons with the energy of 300 eV. The potential of repeller electrode VR inside the ion source collision chamber was xed at 5 V for all measurements. The total mixture pressure was changed from 0.7 to 26.6 Pa. Schemes of ionmolecule reactions were proposed.

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Section: Resultsmentioning

confidence: 99%

Section: Resultsmentioning

confidence: 99%

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Mass Spectrometric Study of Positive Ion-Molecule Reactions in the C₃H₆and Ar Mixtures Inside the High Pressure Ion Source

2013

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“…[21][22][23][24][25][26] In order to gain insight into the observed etch behavior, identities and relative densities of the gas phase species were studied by QMS and OES for the different systems. The process conditions were kept the same as before.…”

Section: Gas Phase Analysismentioning

confidence: 99%

Etching silicon-containing bilayer resists in ammonia-based plasmas

Panda¹,

Wise²,

Mahorowala³

et al. 2005

Journal of Vacuum Science &Amp; Technology B: Microelectronics and Nanometer Structures Processing, Measurement, and Phenomena

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The need to print smaller feature sizes has led to the shift from 248nmto193nm lithography. The disadvantages of 193nm ArF single-layer resist materials, such as lower depth of focus and lower etch resistance, have made thin-film imaging (TFI) techniques an attractive alternative. In the bilayer (comprised of an image layer and an underlayer) approach, a form of TFI, O2-based plasma chemistries are used for the transfer etches whereby oxidation of silicon in the image layer provides the required etch resistance. However, use of oxygen results in profile and critical dimension (CD) control issues. While gas additives have helped minimize these problems, there are other accompanying disadvantages. In this work, the feasibility of a non-O2-containing NH3-based plasma etch chemistry was evaluated. Effects of additive gases, such as N2, H2, and C2H4, were investigated. Surface analysis of the resist showed that nitrogen from the gas phase was incorporated in the surface of the image layer during the etch, and the etch resistance increased with this nitrogen content. Gas phase analysis showed that the relative N2H species density in the system was correlated with the nitrogen incorporated in the image layer, and is thus believed to govern the etch resistance of the image layer. The underlayer etch behavior was correlated with that of the atomic hydrogen species density. The effect of the additives on the cross section profiles and line edge roughness were studied. The highest CD biases were obtained with H2 as the additive, while near-zero CD biases were attained with C2H4 as the additive. Also, with the C2H4 additive, minimum line edge roughness and smoothest profiles were obtained.

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“…The instrument and techniques were described previously [21][22][23]. Hydrogen sulfide and methane used in experiment, supplied by Praxair and Merck were of the best available purity (99.8% and 99.99%, respectively).…”

Section: Methodsmentioning

confidence: 99%

Influence of Repeller Potential on Ion-Molecule Reactions in H₂S and CH₄Mixtures

Wójcik

Markowski

2011

Acta Phys. Pol. A

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Ion-molecule reactions initiated by electron impact in the hydrogen sulfide-methane mixtures have been studied by means of quadrupole mass spectrometer with a high-pressure ion source. The total gas pressure of investigated mixtures was changed from 0.7 to 33.3 Pa. Influence of repeller potential on ion-molecule reactions have been studied. The repeller potential was changed in the range 2-12 V. Measurements were performed for different concentrations of methane and hydrogen sulfide in the mixture (from 10% H2S + 90% CH4 to 90% H2S + 10% CH4 with 10% increment). The major ion-molecule reactions have been identified. The primary ions C + , CH + , CH + 2 , CH + 3 , CH + 4 , S + , HS + , H2S + produced in gas by the electrons with the energy of 300 eV and secondary CH + 5 , C2H + 5 , H3S + , H 34 2 S + , H 34 3 S + , CHS + , CH3S + , S + 2 , HS + 2 , H2S + 2 and H3S + 2 from the ion-molecule reactions were observed. Relative intensities for primary and secondary ions are presented as a function of potential of repeller electrode and concentration of methane in the mixture.

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High pressure investigation of ion/molecule reactions in mixtures of ammonia and argon, and pure ammonia

Cited by 18 publications

References 28 publications

Mass Spectrometric Study of Positive Ion-Molecule Reactions in the C₃H₆and Ar Mixtures Inside the High Pressure Ion Source

Mass Spectrometric Study of Positive Ion-Molecule Reactions in the C₃H₆and Ar Mixtures Inside the High Pressure Ion Source

Etching silicon-containing bilayer resists in ammonia-based plasmas

Influence of Repeller Potential on Ion-Molecule Reactions in H₂S and CH₄Mixtures

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High pressure investigation of ion/molecule reactions in mixtures of ammonia and argon, and pure ammonia

Cited by 18 publications

References 28 publications

Mass Spectrometric Study of Positive Ion-Molecule Reactions in the C3H6and Ar Mixtures Inside the High Pressure Ion Source

Mass Spectrometric Study of Positive Ion-Molecule Reactions in the C3H6and Ar Mixtures Inside the High Pressure Ion Source

Etching silicon-containing bilayer resists in ammonia-based plasmas

Influence of Repeller Potential on Ion-Molecule Reactions in H2S and CH4Mixtures

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Mass Spectrometric Study of Positive Ion-Molecule Reactions in the C₃H₆and Ar Mixtures Inside the High Pressure Ion Source

Mass Spectrometric Study of Positive Ion-Molecule Reactions in the C₃H₆and Ar Mixtures Inside the High Pressure Ion Source

Influence of Repeller Potential on Ion-Molecule Reactions in H₂S and CH₄Mixtures