High-pressure hydrogen annealing improving the cryogenic operation of Si (110)-oriented n-MOSFETs
Shunsuke Shitakata,
Hiroshi Oka,
Takumi Inaba
et al.
Abstract:This study experimentally investigated the effects of an additional high-pressure hydrogen annealing (HPHA) on the cryogenic operation of Si (110)-oriented n- MOSFETs. The HPHA induced improvements in the subthreshold swing (SS), threshold voltage (Vth), and ON current at cryogenic temperatures. Further, we analyzed the SS-drain current curves using the analytical model and concluded that HPHA reduced the density of the band-edge states. In addition, the analysis of the temperature-dependent Vth supported this… Show more
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