1996
DOI: 10.1002/pssb.2221970136
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High pressure electrical resistivity study on cubic SnTe1−xSex

Abstract: n In c c 3 g v > c In c Q) c t -20 30 40 50 60 70 80 I ) Madras 600 025, India.

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Cited by 7 publications
(4 citation statements)
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“…Then, at a particular pressure of about 1 GPa, there is a sharp increase in resistance after which the resistance again drops with the increase of pressure. This is similar to the reported [7,8] behaviour, observed in SnTe in which the increase of resistivity curve at 1.8 GPa corresponds to first order structural phase transition. It is also notable that the SnTe is also having the same orthorhombic structure.…”
Section: Resultssupporting
confidence: 88%
See 1 more Smart Citation
“…Then, at a particular pressure of about 1 GPa, there is a sharp increase in resistance after which the resistance again drops with the increase of pressure. This is similar to the reported [7,8] behaviour, observed in SnTe in which the increase of resistivity curve at 1.8 GPa corresponds to first order structural phase transition. It is also notable that the SnTe is also having the same orthorhombic structure.…”
Section: Resultssupporting
confidence: 88%
“…Therefore, the observed discontinuous rise in the resistivity of this BTCC crystal at about 1GPa may be due to the pressure induced phase transition. The similarity of the resistivity behaviour of BTCC below 3.0 GPa (the region left to the dotted line) is well compared with that of reported [7,8] SnTe. This gives the hints for possible pressure induced phase transitions.…”
Section: Resultssupporting
confidence: 56%
“…Then, at a particular pressure, there is a rapid increase in resistance after which the resistance again drops with the increase of pressure. This is similar to the behaviour observed in SnTe [5,6] in which the increase of resistivity at 1.8 GPa corresponds to a first order structural transformation. It is also notable that SnTe is also having the same orthorhombic structure Therefore, the observed discontinuous rise in the resistivity of this crystal ZTS at about 1.5 GPa may be due to the pressure induced phase transition.…”
Section: Resultssupporting
confidence: 83%
“…Several authors [7,[9][10][11][12][13][14][15][16] have investigated the optical and electrical properties of the binary Pb(Te, Se); Sn(Te, Se) and ternary PbTe x Se 1−x ; SnTe x Se 1−x , compounds in thin film form.…”
Section: Introductionmentioning
confidence: 99%