High pressure electrical resistivity study on orthorhombic SnTe1−xSex

Ariponnammal, S.; Jayavel, B.; Natarajan, S.

doi:10.1016/0038-1098(96)00344-4

Cited by 4 publications

(1 citation statement)

References 9 publications

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“…Several authors [7,[9][10][11][12][13][14][15][16] have investigated the optical and electrical properties of the binary Pb(Te, Se); Sn(Te, Se) and ternary PbTe x Se 1−x ; SnTe x Se 1−x , compounds in thin film form.…”

Section: Introductionmentioning

confidence: 99%

Structural and optical absorption studies on polycrystalline Pb_xSn_1−xTe_0.5Se_0.5thin films

El‐Sayad¹,

Farag²,

Farag³

et al. 2007

J. Phys. D: Appl. Phys.

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Polycrystalline ingots of PbxSn1−xTe0.5Se0.5 (x = 0.4, 0.6, 0.8 and 1.0) were synthesized. Thin films of PbxSn1−xTe0.5Se0.5 were prepared by conventional thermal evaporation of the prereacted materials. The chemical composition of the starting materials as well as thin films revealed that they are nearly stoichiomeric. The crystal structure and the unit cell lattice parameters of the starting materials were determined from x-ray diffraction studies. It was revealed that the as-deposited and annealed films are polycrystalline with the single phase of the rock salt (NaCl) structure as that of the bulk material with a (2 0 0) predominant reflecting plane. The optical absorption of the annealed films at 473 K was determined from the optical transmittance data in the spectral range 2.5–10 µm. The analysis of the optical absorption spectra of the investigated films revealed direct energy gaps. However, the band gaps showed linear variation with the value of x.

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