High pressure dependence of the electronic properties of bound states in n-type GaAs

Pressure Induced Shallow-Deep A1Transition for Sn Donor in GaAs Observed in Diamond Anvil Cell Photoluminescence Experiment

“…2). This pressure coefficient is similar to the previously observed pressure coefficients of the Ge deep Al level derived from far-infrared spectroscopy (2.1 meV/kbar with respect to the valence band) [8] and 1.8-2.7 meV/kbar reported for Si donor [6,9,10] from photoluminescence. The observation of similar pressure coefficients for all group IV donors which differ from those for group VI donors (r., O meV/kbar [11][12][13]) is consistent with theoretical calculations of energy levels of localized Al states of different substitutional donor impurities [14].…”

“…The width, shape and energy position of the maximum of the line at 1.512 eV, analogouS to thoSe reported for highly Te [5] and Si [6] doped GaAs, allows uS to follow authors of Ref. [5] and [6] and attribute this line to indirect recombination of free electrons up to the Fermi level and acceptor-like localized states (eA) [5,6]. At lower energies a broad deep Y-1.2 eV luminescence band is observed characteristic of n-type highly doped GaAs [7].…”

Spatially resolved electronic structure of an isovalent nitrogen center in GaAs

“…At concentrations well below 1% (i.e., <10 19 cm −3 ), nitrogen induces a localized state which gives a strong narrow line in optical measurements, corresponding to an energetic feature 150-180 meV above the conduction-band edge [1][2][3][4][5]. Thus, unlike for nitrogen in GaP, the resonance level of a single nitrogen lies in the conduction band of GaAs.…”

Pressure-induced shallow donor transformations in gallium arsenide

“…While in this configuration, shallow donors in GaAs possess properties which are influenced by the conduction-band wave functions near the X symmetry point of the Brillouin zone. Numerous studies have been performed on these donors using photoluminescence, [5][6][7][8][9] Hall effect, 10 and magnetospectroscopy using far-infrared lasers. 11,12 To date, no one has reported broadband far-infrared spectroscopy on these X-band donors, though it has been performed for the normal ⌫-band associated donors in GaAs.…”