2017
DOI: 10.1039/c7ce01083d
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High-pressure crystallization and properties of diamond from magnesium-based catalysts

Abstract: HPHT diamond synthesis using catalysts based on magnesium demonstrates a number of intriguing characteristics. In this highlight, we review the major characteristics of the growth, morphology, internal structure, and defect and impurity content of diamonds crystallized using Mg-based catalysts.

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Cited by 58 publications
(47 citation statements)
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References 78 publications
(94 reference statements)
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“…(Data for SiV − , SnV − , GeV − , and PbV − color center, respectively, taken from refs. [66,68,37,69]).…”
Section: Optical Properties Of XV − Color Centers In Diamondmentioning
confidence: 99%
“…(Data for SiV − , SnV − , GeV − , and PbV − color center, respectively, taken from refs. [66,68,37,69]).…”
Section: Optical Properties Of XV − Color Centers In Diamondmentioning
confidence: 99%
“…29,30 It should mention that the groups of -CH 2 -and -CH 3 have not ever been detected in natural diamond stones until now, but the structure of >C=CH 2 is universally observed in natural diamond stones of type-Ia. This consideration is supported by an experimental fact that -CH 2 -group presents in diamond specimens synthesized in the NiFe-C-H 2 O system in the temperature range 1300-1370 °C, while the structure of >C=CH 2 appears instead in diamond crystals grown in the S-C-H 2 O system at temperatures exceeding 1800 °C.…”
Section: Resultsmentioning
confidence: 99%
“…The crystals are colorless but also contain brown or even black zones. More information about the synthesis conditions and spectroscopic characterization can be found in the series of papers …”
Section: Methodsmentioning
confidence: 99%
“…The nitrogen‐vacancy (NV 0/− ) and silicon‐vacancy (SiV 0/− ) centers are the most studied centers, they have narrow zero‐phonon lines and can be used in different applications in quantum optics . Also, the negatively charged germanium‐vacancy (GeV − ) and tin‐vacancy (SnV − ) centers have been detected recently by optical spectroscopy, these defects can be considered as the analogs of the silicon‐vacancy center . Since the discussed defects are thought to be used in quantum applications, it is especially important to study their relaxation dynamics.…”
Section: Introductionmentioning
confidence: 99%