High-pressure cell for studies of ultra-short laser impulses action on materials

Michel, Jean-Pierre; Beauverger, M.; Museur, L.; Kanaev, Andreï; Petitet, J. P.

doi:10.1080/08957950701435424

Cited by 3 publications

(2 citation statements)

References 17 publications

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“…In principle, this dissociation is possible only if the gain in energy, due to the charge localization, is greater than the exciton binding energy. This set the lower limit to exciton binding energy to Nevertheless, we have recently shown that laser UV irradiation of hBN under vacuum promotes the creation of nitrogen vacancies and the sample enrichment by boron 11,12,27 .…”

Section: Donor Acceptor Emission At 53 Evmentioning

confidence: 99%

Near band-gap photoluminescence properties of hexagonal boron nitride

Museur¹,

Kanaev²

2008

Journal of Applied Physics

101

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Near band-gap luminescence (hν≥5 eV) of hexagonal boron nitride has been studied by means of the time-and energy-resolved photoluminescence spectroscopy method. Two emissions have been observed at 5.5 eV and 5.3 eV. The high-energy emission at 5.5 eV is composed of fixed sub-bands assigned to bound excitons at 5.47 eV, 5.56 eV and 5.61 eV. The non-structured low-energy emission at 5.3 eV undergoes a large blue shift (up to 120 meV) with a linear slope exc lum E E ∆ ∆ / <1 with increasing excitation energy E exc . At 7 . 5 ≥ exc E eV, the band position is fixed and marks the transition from the Raman to the photoluminescence regime. We assign the 5.3 eV band to quasi donor-acceptor pair (q-DAP) states due to electrostatic band fluctuations induced by charged defects. The shift is explained by photo-induced neutralization of charged defect states. The absence of contribution to the q-DAP luminescence from exciton suggests the existence of a large exciton binding energy, which is qualitatively consistent with theoretical predictions. 3

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Section: Donor Acceptor Emission At 53 Evmentioning

confidence: 99%

Near band-gap photoluminescence properties of hexagonal boron nitride

Museur¹,

Kanaev²

2008

Journal of Applied Physics

101

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“…[11], which operates in the pressure range between 10 -3 mbar and 10 3 bar. Input and output cell windows are made of sapphire that is a transparent material in the UV spectral range λ≥200 nm.…”

Section: Experiments and Sample Preparationmentioning

confidence: 99%

Picosecond laser structuration under high pressures: Observation of boron nitride nanorods

Museur

Petitet

Michel

et al. 2008

Journal of Applied Physics

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We report on picosecond UV-laser processing of hexagonal boron nitride (hBN) at moderately high pressures above 500 bar. The main effect is specific to the ambient gas and laser pulse duration in the ablation regime: when samples are irradiated by 5 ps or 0.45 ps laser pulses in nitrogen gas environment, multiple nucleation of a new crystalline product -BN nanorods -takes place. This process is triggered on structural defects, which number density strongly decreases upon recrystallization. Non-linear photon absorption by adsorbed nitrogen molecules is suggested to mediate the nucleation-growth. High pressure is responsible for the confinement and strong backscattering of ablation products. A strong surface structuring also appears at longer 150-ps laser irradiation in similar experimental conditions. However, the transformed product in this case is amorphous strongly contaminated by boron suboxides BxOy.

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Raman Spectra of Minerals

Чуканов

Вигасина

2019

Vibrational (Infrared and Raman) Spectra of Minerals and Related Compounds

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High-pressure cell for studies of ultra-short laser impulses action on materials

Cited by 3 publications

References 17 publications

Near band-gap photoluminescence properties of hexagonal boron nitride

Near band-gap photoluminescence properties of hexagonal boron nitride

Picosecond laser structuration under high pressures: Observation of boron nitride nanorods

Raman Spectra of Minerals

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