2017
DOI: 10.1002/anie.201708684
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High‐Pressure Band‐Gap Engineering in Lead‐Free Cs2AgBiBr6 Double Perovskite

Abstract: Novel inorganic lead-free double perovskites with improved stability are regarded as alternatives to state-of-art hybrid lead halide perovskites in photovoltaic devices. The recently discovered Cs AgBiBr double perovskite exhibits attractive optical and electronic features, making it promising for various optoelectronic applications. However, its practical performance is hampered by the large band gap. In this work, remarkable band gap narrowing of Cs AgBiBr is, for the first time, achieved on inorganic photov… Show more

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Cited by 210 publications
(176 citation statements)
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References 33 publications
(12 reference statements)
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“…[62,138] Zhou et al obtained an indirect bandgap of 2.52 eV for Cs 2 Ag-BiBr 6 NCs. [140] Specifically, Cs 2 AgBiBr 6 presented a bandgap of 1.7 eV at ≈15 GPa, which is comparable with that of MAPbI 3 . The enlarged bandgap can be ascribed to the quantum confinement effect in Cs 2 AgBiBr 6 NCs.…”
Section: + /Bi 3+ Halide Double Perovskitesmentioning
confidence: 76%
“…[62,138] Zhou et al obtained an indirect bandgap of 2.52 eV for Cs 2 Ag-BiBr 6 NCs. [140] Specifically, Cs 2 AgBiBr 6 presented a bandgap of 1.7 eV at ≈15 GPa, which is comparable with that of MAPbI 3 . The enlarged bandgap can be ascribed to the quantum confinement effect in Cs 2 AgBiBr 6 NCs.…”
Section: + /Bi 3+ Halide Double Perovskitesmentioning
confidence: 76%
“…Du et al have demonstrated bandgap engineering of Cs 2 AgBiBr 6 through alloying of trivalent cations such as Sb 3+ . [198] They found that the narrowed bandgap is partially retainable after releasing the pressure. [197] The bandgap reduction is attributed to the higher energy levels of Sb 5s states than that of Bi 6s states, which slightly raises the VBM.…”
Section: D a 2 B(i)b(ii)x 6 Halide Double Perovskitesmentioning
confidence: 99%
“…[47] Notably, at 3.1 GPa, the inclined upward straight lines tend to bend towards the Z ′ axis ( Figure S1b, Supporting Information), which indicated that pressure induced the ionic transport behavior to electrical transport behavior transition. Jaffe et al [48] and Li et al [42] reported that similar structural amorphization contributed to the continuous band gap narrowing at higher pressure before. Thus, the observed ionic transport to electrical transport behavior transition should be induced by the phase transition when phase III becomes dominant.…”
mentioning
confidence: 91%
“…[42] They found that the band gap of Cs 2 AgBiBr 6 started to decrease above 6.5 GPa. At higher pressure, and especially after the third phase transition, only five broad peaks were left.…”
mentioning
confidence: 99%