High pressure and high magnetic field behaviour of free and donor‐bound‐exciton photoluminescence in InSe

Millot, Marius; Gilliland, S.; Broto, Jean-Marc; González, J.; Leotin, J.; Chévy, A.; Segura, A.

doi:10.1002/pssb.200880542

Cited by 4 publications

(4 citation statements)

References 13 publications

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“…IV of the Supplemental Material [35] (see, also, references [41][42][43][44][45] therein), the magnetic field dependence for InSe samples agree well with the previous magneto-optical study of InSe by Millot et al, revealing Landau level quantization at high B. [43,44] The shift of the absorption edge for InSe in a magnetic field is due to the diamagnetic shift of an exciton state. At low B (< 30 T), this is well decribed by a quadratic dependence.…”

Section: Methodssupporting

confidence: 86%

Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T

et al. 2021

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The SnSe 2(1−x) S2x alloy is a van der Waals semiconductor with versatile, tunable electronic properties and prospects for future applications ranging from electronics to thermoelectrics and superconductivity. Its band structure and carrier effective masses underlie the quantum behaviour of charge carriers and hold great promise in future technologies. However, experimental measurement of these properties remains a challenging task. Here, magneto-transmission spectroscopy of SnSe 2(1−x) S2x thin films at pulsed magnetic fields B of up to 150 T reveals a large electron-hole reduced cyclotron mass µ * > 0.454 me (me is the free electron mass). This finding is supported by first-principle calculations of the band structure and by semiclassical Boltzmann transport theory, which predict a pronounced anisotropy of the carrier effective masses and electrical conductivity over two orthogonal directions (namely in the layer plane and out-of-plane) with a different anisotropy for electrons and holes. These properties are unique and important features of this class of compounds and are critical for understanding and using the tunable band structure of SnSe 2(1−x) S2x in fundamental and applied research.

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Section: Methodssupporting

confidence: 86%

Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T

et al. 2021

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“…6,7 In fact, high-field magneto-optical measurements under high pressure at low temperature have been recently shown to be a powerful tool for the investigation of the electronic structure of semiconductors and luminescent materials. [8][9][10][11][12] In this paper we report on an investigation of the peculiar electronic structure of the layered semiconductor InSe by magnetooptical experiments under high pressure up to 5 GPa taking advantage of the recent development of a specific setup allowing to perform magnetoabsorption spectroscopy under pulsed magnetic field up to 60 T on compressed samples within a diamond-anvil cell ͑DAC͒.…”

Section: Introductionmentioning

confidence: 99%

Electronic structure of indium selenide probed by magnetoabsorption spectroscopy under high pressure

et al. 2010

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We report on an investigation of the peculiar electronic structure of the layered semiconductor InSe by magneto-optical experiments under high pressure up to 5 GPa. Magneto-absorption spectroscopy is performed under pulsed magnetic field up to 53 T using a specific setup. Excitonic magnetofingerprints and high-field oscillatory magnetoabsorption yield significant details on the band structure. In addition, the application of an external pressure unveils phenomena that confirm the specific k • p model proposed for this compound on the basis of earlier measurements.

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“…As we will see in Section 6, this crossover is also responsible for the behavior of the transport properties of n-type InSe under high pressure. Further details on the electronic structure of InSe were obtained through magneto-optic experiments at low temperature and high pressure [68,69].…”

Section: Crystals 2018 8 X For Peer Review 12 Of 25mentioning

confidence: 99%

“…In the framework of a simple • model [52], this is an unexpected behavior, as the effective mass should be proportional to the bandgap and then exhibit its nonlinear behavior. Further details on the electronic structure of InSe were obtained through magneto-optic experiments at low temperature and high pressure [68,69].…”

Section: Crystals 2018 8 X For Peer Review 12 Of 25mentioning

confidence: 99%

Layered Indium Selenide under High Pressure: A Review

Segura

2018

Crystals

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This paper intends a short review of the research work done on the structural and electronic properties of layered Indium Selenide (InSe) and related III-VI semiconductors under high pressure conditions. The paper will mainly focus on the crucial role played by high pressure experimental and theoretical tools to investigate the electronic structure of InSe. This objective involves a previous revision of results on the pressure dependence of the InSe crystal structure and related topics such as the equation of state and the pressure-temperature crystal phase diagram. The main part of the paper will be devoted to reviewing the literature on the optical properties of InSe under high pressure, especially the absorption experiments that led to the identification of the main optical transitions, and their assignment to specific features of the electronic structure, with the help of modern first-principles band structure calculations. In connection with these achievements we will also review relevant results on the lattice dynamical, dielectric, and transport properties of InSe, as they provided very useful supplementary information on the electronic structure of the material.

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High pressure and high magnetic field behaviour of free and donor‐bound‐exciton photoluminescence in InSe

Cited by 4 publications

References 13 publications

Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T

Heavy carrier effective masses in van der Waals semiconductor Sn(SeS) revealed by high magnetic fields up to 150 T

Electronic structure of indium selenide probed by magnetoabsorption spectroscopy under high pressure

Layered Indium Selenide under High Pressure: A Review

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