High-preformance diamond surface-channel field-effect transistors and their operation mechanism

Tsugawa, Kazuo; Kitatani, K.; Noda, Hiroshi; Hokazono, A.; Hirose, Kazuyuki; Tajima, M.; Kawarada, Hiroshi

doi:10.1016/s0925-9635(98)00449-x

Cited by 99 publications

(32 citation statements)

References 24 publications

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“…Previous studies on diamond MESFETs have shown that the surface carrier density can be as high as ∼ 10 13 carriers/cm 2 , with a junction depth less than 10 nm [22,43]. However, this lightly p-type surface conductivity has been found to disappear after dehydrogenation or oxidation of the surface [44][45][46][47][48][49].…”

Section: Discussionmentioning

confidence: 97%

Covalent molecular functionalization of diamond thin-film transistors

Sun

Baker

Butler

et al. 2007

Diamond and Related Materials

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Section: Discussionmentioning

confidence: 97%

Covalent molecular functionalization of diamond thin-film transistors

Sun

Baker

Butler

et al. 2007

Diamond and Related Materials

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“…Surface wetchemical oxygenation removes the conductive layer and restores the insulating properties of diamond. Meanwhile, the surface related conductivity has been utilized for electronic applications like Schottky diodes, MESFET and MOSFET structures [5,[11][12][13].…”

Section: Introductionmentioning

confidence: 99%

Low Temperature Surface Conductivity of Hydrogenated Diamond

Sauerer

Ertl

Nebel

et al. 2001

phys. stat. sol. (a)

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Conductivity and Hall experiments are performed on hydrogenated poly-CVD, atomically flat homoepitaxially grown Ib and natural type IIa diamond layers in the regime 0.34 to 400 K. For all experiments hole transport is detected with sheet resistivities at room temperature in the range 10 4 to 10 5 W/ & . We introduce a transport model where a disorder induced tail of localized states traps holes at very low temperatures (T < 70 K). The characteristic energy of the tail is in the range of 6 meV. Towards higher temperatures (T > 70 K) the hole density is approximately constant and the hole mobility m is increasing two orders of magnitude. In the regime 70 K < T < 200 K, m is exponentially activated with 22 meV, above it follows a $T 3/2 law. The activation energy of the hole density at T < 70 K is governed by the energy gap between holes trapped in the tail and the mobility edge which they can propagate. In the temperature regime T < 25 K an increasing hole mobility is detected which is attributed to transport in delocalized states at the surface.

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“…229)230 The most recent work by Tsugawa et al 143 has shown improved device performance in both enhancement-and depletion-mode MESFETs in which the threshold voltage is controlled by the choice of electronegativity of the gate metal. A depletion-mode MOSFET using Sif), as the gate insulator was also developed.…”

Section: B Hydrogen-terminated Channel Diamond-based Fetsmentioning

confidence: 99%