High-precision mapping of diamond crystal strain using quantum interferometry

Abstract

Crystal strain variation imposes significant limitations on many quantum sensing and information applications for solid-state defect qubits in diamond. Thus, precision measurement and control of diamond crystal strain is a key challenge. Here, we report diamond strain measurements with a unique set of capabilities, including micron-scale spatial resolution, millimeter-scale field-of-view, and a two order-of-magnitude improvement in volume-normalized sensitivity over previous work [1], reaching 5(2) × 10 −8 / Hz • µm 3 (with spin-strain coupling coefficients representing the dominant systematic uncertainty). We use strain-sensitive spin-state interferometry on ensembles of nitrogen vacancy (NV) color centers in single-crystal CVD bulk diamond with low strain gradients. This quantum interferometry technique provides insensitivity to magnetic-field inhomogeneity from the electronic and nuclear spin bath, thereby enabling long NV ensemble electronic spin dephasing times and enhanced strain sensitivity. We demonstrate the strain-sensitive measurement protocol first on a scanning confocal laser microscope, providing quantitative measurement of sensitivity as well as three-dimensional strain mapping; and second on a wide-field imaging quantum diamond microscope (QDM). Our strain microscopy technique enables fast, sensitive characterization for diamond material engineering and nanofabrication; as well as diamond-based sensing of strains applied externally, as in diamond anvil cells or embedded diamond stress sensors, or internally, as by crystal damage due to particle-induced nuclear recoils.

AC sensing using nitrogen vacancy centers in a diamond anvil cell up to 6 GPa

“…The sensitivity may also be improved by utilizing double quantum coherence under pressure [38,39]. The AC-ODMR experiments described here are based on single quantum coherence in which the NV is prepared in the state |0 + | ± 1 .…”