High precision AlGaAsSb ridge-waveguide etching by<i>in situ</i>reflectance monitored ICP-RIE

Tran, N. T.; Breivik, Magnus; Patra, Saroj Kumar; Fimland, B. O.

doi:10.1117/12.2052615

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“…The etch stop was controlled precisely, as described in detail in ref. 18, to 100 nm above the active region, using in situ reflectance monitoring.…”

Section: B Device Fabricationsmentioning

confidence: 99%

Aluminum-based contacts for use in GaSb-based diode lasers

Tran

Patra

Breivik

et al. 2016

Journal of Vacuum Science &Amp; Technology B, Nanotechnology and Microelectronics: Materials, Processing, Measurement, and Phen

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Aluminum-based contacts could be a good alternative to conventional gold-based contacts for a number of GaSb-based devices. In this study, the use of some Al-based contacts in GaSbbased diode lasers was investigated via the measurement of specific contact resistivity and laser output characteristics. The Al-based contacts to p-type GaSb(001) exhibited lower specific contact resistivities than the conventional Au-based contacts, whereas the opposite was the case for contacts to n-type GaSb(001). The good performance of GaSb-based laser diodes using Al-based contacts shows the applicability of this type of contact in GaSb-based devices. The contact between Al only and p-type GaSb(001), however, could suffer from a reliability problem when used in diode lasers, due to interdiffusion, in which case a diffusion barrier should be included.

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“…The etch stop was controlled precisely, as described in detail in ref. 18, to 100 nm above the active region, using in situ reflectance monitoring.…”

Section: B Device Fabricationsmentioning

confidence: 99%