High-Powered RF SOI Switch With Fast Switching Time for TDD Mobile Applications

Abstract

This paper presents a fast switching and high-powered single-pole double-throw (SPDT) switch for RF switch circuits, such as TRx antenna switches and frequency band (or operation mode) selection switches in mobile handset applications. For fast switching time and performances of the RF switch, we proposed a novel method that can ''selectively'' control the impedance of a gate biasing circuit (''high'' or ''low'' impedance). The proposed SPDT switch use the low impedance of the gate biasing circuit for fast switching time and use the high impedance of the gate biasing circuit to avoid the degradation of the insertion loss and harmonics. The proposed SPDT switch has no additional bias and no large payment for size consumption. According to measurement results, the turn-on switching time of the proposed SPDT switch was 0.35 µs (at 2 GHz). The insertion loss, isolation, and return loss at 2 GHz were 0.16 dB, 47.1 dB, and 24 dB respectively. 2nd and 3rd harmonic levels at 25 dBm input power at 2 GHz were −88.7 dBm and −78.9 dBm, respectively. Power handling capability was 39.5 dBm of input power at 2 GHz. The designed SPDT switch was implemented in a 0.13-µm partially depleted silicon-on-insulator (PD-SOI) process.INDEX TERMS Fast switching time, high-power handling, partially depleted silicon-on-insulator (PD-SOI), RF switch, single-pole double-throw (SPDT).

Monolithic MIPI SOI CMOS single-pole fourteen-throw antenna switch module with on-chip transmit filters for cellular handsets

“…Designing the primary antenna switch presents a significant challenge as it involves accommodating numerous parallel radio paths within a confined physical space, while maintaining low insertion loss (IL) with excellent isolation and linearity across different channels over a broad frequency range. Siliconon-insulator (SOI) CMOS technology [5,6,7,8,9,10] has emerged as a preferred choice for switch applications, as it offers cost-effectiveness, reduced size, increased integration capabilities, and lower voltage operation, compared to the GaAs pHEMT process [11,12,13].…”