High power VCSELs for miniature optical sensors

High power VCSEL arrays have experienced rapid growth and development. In this paper, we review the unique properties of VCSELs and present the progress that is making them very attractive for high power laser applications. INTRODUCTIONOver the past five to ten years, high-power vertical-cavity surface emitting laser (VCSEL) arrays have experienced rapid growth and development. Traditionally known for low-power applications such as short reach datacom links, recent work has shown VCSELs to be capable of high efficiencies and very high output powers. Coupled with that are the unique properties of VCSELs, such as circularly symmetric output beam, narrow spectral linewidth, and a low-cost fabrication model; high-power VCSEL arrays are becoming increasingly attractive for high-power laser applications such as solid-state pumping, welding, illumination, and printing, to name a few.The leading diode laser technology currently supplied to the marketplace is the edge-emitting laser (EEL), which boasts very high conversion efficiencies (60% -70%), and can be stacked to achieve kW-class power levels. While current VCSEL array efficiencies are typically <50%, other properties lend to potential improved system level performance and lower system level costs. This paper reviews the benefits of VCSELs and presents the current state of the art performance from VCSEL arrays.

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“…Our work at 885 nm has similarly shown peak efficiencies of 55% and 50% at 20°C and 60°C, respectively, as shown in Fig. 1a [5].…”

Section: Current State Of the Artsupporting

confidence: 74%

Recent advances in high-power VCSEL arrays

Wang

Geske

Berdin

et al. 2012

2012 IEEE Photonics Society Summer Topical Meeting Series

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“…[13][14][15] The 808-nm pulsed laser sources are also used in the medical field for skin-care related cosmetic applications such as hair removal, [16] and they also used as industrial and military infra-red illumination sources. [17,18] Compared with the conventional 808-nm edge-emitting semiconductor lasers, VCSELs have good wavelength stability for varying environment temperatures. The VCSELs also exhibit a small divergence angle and circular output beam, which is conducive to the collimation or focusing.…”

Section: Introductionmentioning

confidence: 99%

Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers

Zhao¹,

Xun²,

Pan³

et al. 2022

Chinese Phys. B

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The 808-nm vertical cavity surface emitting laser (VCSEL) with strained In0.13Ga0.75Al0.12As/Al0.3Ga0.7As quantum wells is designed and fabricated. Compared with the VCSELs with Al0.05Ga0.95As/Al0.3Ga0.7As quantum wells, the VCSEL with strained In0.13Ga0.75Al0.12As/Al0.3Ga0.7As quantum wells is demonstrated to possess higher power conversion efficiency (PCE) and better temperature stability. The maximum PCE of 43.8% for 10-μm VCSEL is achieved at an ambient temperature of 30 °C. The size-dependent thermal characteristics are also analyzed by characterizing the spectral power and output power. It demonstrates that small oxide-aperture VCSELs are advantageous for temperature-stable performance.

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High-Power VCSEL Arrays

Seurin

2012

Springer Series in Optical Sciences

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High power VCSELs for miniature optical sensors

Cited by 5 publications

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Recent advances in high-power VCSEL arrays

Recent advances in high-power VCSEL arrays

Improved thermal property of strained InGaAlAs/AlGaAs quantum wells for 808-nm vertical cavity surface emitting lasers

High-Power VCSEL Arrays

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