Abstract:We demonstrate a fully integrated extended distributed Bragg reflector (DBR) laser with ∼1 kHz linewidth and over 37 mW output power, as well as a ring-assisted DBR laser with less than 500 Hz linewidth. The extended DBR lasers are fabricated by heterogeneously integrating III-V material on Si as a gain section plus a 15 mm long, low-kappa Bragg grating reflector in an ultralow-loss silicon waveguide. The low waveguide loss (0.16 dB/cm) and long Bragg grating with narrow bandwidth (2.9 GHz) are essential to re… Show more
“…We expect that the demonstrated tuning method based on resonant intracavity filtering can be applied to other types of lasers as well. Possible examples are photonic crystal lasers [35,36], Bragg waveguides [37,38], other gain materials [39,40] or nonlinear gain. The expected advantages are linewidth narrowing without obstructing continuous tuning, increasing the tuning range without obstructing linewidth narrowing, and reduced power consumption or higher speed in continuous tuning or stabilization of single-frequency lasers.…”
Extending the cavity length of diode lasers with feedback from Bragg structures and ring resonators is highly effective for obtaining ultra-narrow laser linewidths. However, cavity length extension also decreases the free-spectral range of the cavity. This reduces the wavelength range of continuous laser tuning that can be achieved with a given phase shift of an intracavity phase tuning element. We present a method that increases the range of continuous tuning to that of a short equivalent laser cavity, while maintaining the ultra-narrow linewidth of a long cavity. Using a single-frequency hybrid integrated InP-Si3N4 diode laser with 120 nm coverage around 1540 nm, with a maximum output of 24 mW and lowest intrinsic linewidth of 2.2 kHz, we demonstrate a six-fold increased continuous and mode-hop-free tuning range of 0.22 nm (28 GHz) as compared to the free-spectral range of the laser cavity. arXiv:1912.09455v1 [physics.optics]
“…We expect that the demonstrated tuning method based on resonant intracavity filtering can be applied to other types of lasers as well. Possible examples are photonic crystal lasers [35,36], Bragg waveguides [37,38], other gain materials [39,40] or nonlinear gain. The expected advantages are linewidth narrowing without obstructing continuous tuning, increasing the tuning range without obstructing linewidth narrowing, and reduced power consumption or higher speed in continuous tuning or stabilization of single-frequency lasers.…”
Extending the cavity length of diode lasers with feedback from Bragg structures and ring resonators is highly effective for obtaining ultra-narrow laser linewidths. However, cavity length extension also decreases the free-spectral range of the cavity. This reduces the wavelength range of continuous laser tuning that can be achieved with a given phase shift of an intracavity phase tuning element. We present a method that increases the range of continuous tuning to that of a short equivalent laser cavity, while maintaining the ultra-narrow linewidth of a long cavity. Using a single-frequency hybrid integrated InP-Si3N4 diode laser with 120 nm coverage around 1540 nm, with a maximum output of 24 mW and lowest intrinsic linewidth of 2.2 kHz, we demonstrate a six-fold increased continuous and mode-hop-free tuning range of 0.22 nm (28 GHz) as compared to the free-spectral range of the laser cavity. arXiv:1912.09455v1 [physics.optics]
“…(3) based on direct demodulation [3], [4], 2) a self-homodye delay-interferometer, implemented in the OEwaves OE4000 laser linewidth and phase noise system and 3) the Bayesian filtering framework, implementing the UKF or EKF. The LUT is a fully integrated ultra-low noise laser with an output power of -2.3 dBm [7]. The LO is a Koshin Kogaku tunable laser with output power of 2 dBm.…”
“…Hybrid/heterogenous [36] silicon photonic diode lasers enable additional degrees of freedom as compared to III -V lasers by combining the best of both worlds. SiPh offers low propagation loss and high integration densities while III -V material contributes high gain values [37] and the flexibility for bandgap engineering via changes in material composition [38], realizing high performance, novel light sources; examples are the high power, sub-kHz linewidth heterogenous silicon laser [39] as well as hybrid/heterogenous silicon lasers that operate in the spectroscopically imperative wavelength region above 2 µm [40]. Hybrid integration allows for III -V and silicon to be individually optimized, while the heterogenous approach enables compact footprint in addition to demonstrating potential for high-volume production [36].…”
In recent years, the 2 µm waveband has been gaining significant attention due to its potential in the realization of several key technologies, specifically, future long-haul optical communications near the 1.9 µm wavelength region. In this work, we present a hybrid silicon photonic wavelength-tunable diode laser with an operating range of 1881-1947 nm (66 nm) for the first time, providing good compatibility with the hollow-core photonic bandgap fiber and thulium-doped fiber amplifier. Room-temperature continuous-wave operation was achieved with a favorable on-chip output power of 28 mW. Stable single-mode lasing was observed with side-mode suppression ratio up to 35 dB. Besides the abovementioned potential applications, the demonstrated wavelength region will find critical purpose in H 2 O spectroscopic sensing, optical logic, signal processing as well as enabling the strong optical Kerr effect on Si.
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