Abstract:Results of the development of high power, high efficiency silicon carbide RF MESFETs are reported. High power densities of over 3W/mm have been measured for devices with total power output in excess of 20W. The devices have been fabricated using a novel lateral epitaxy technique. The MESFET employs a buried p-type depletion stopper in order to suppress short channel effects and increase the operation voltage. The use of the depletion stopper also allows high RF signal gain, while maintaining high voltage opera… Show more
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