High power planar interconnect for high frequency converters

Fillion, R.; Delgado, E.; Beaupre, Richard; McConnelee, P.

doi:10.1109/eptc.2004.1396570

Cited by 13 publications

(10 citation statements)

References 2 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…The top side of the devices (anode, emitter, or source) is directly wire-bonded to the top of the blade connector. Alternatively, a wirebond-less device interconnect, such as GE Power OverLay (POL) [8], has been used for connecting the device top side to the connector.…”

Section: Q1mentioning

confidence: 99%

See 1 more Smart Citation

Low inductance power module with blade connector

Stevanovic

Beaupre

Delgado

et al. 2010

2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

View full text Add to dashboard Cite

A novel single-switch power module has been developed, featuring a laminated blade connector for low inductance interconnect to a busbar. The module was designed, optimized and experimentally validated as part of a high frequency three-phase converter, demonstrating parasitic inductances of less than one nano henry for the module and as low as five nano henries for the converter phase-leg commutation loop. The flexible plug-in hardware facilitated direct comparison of switching performance between three different chipsets, including a 150A and a 300A hybrid designs using the fastest 1200V silicon IGBTs with silicon carbide (SiC) Schottky diodes, as well as a 150A all-SiC module with emerging SiC MOSFETs. The results were also compared with switching performance of standard modules. First, the impact of parasitic inductance on switching performance was quantified by testing the same 300A hybrid chipset in an industry-standard module. Compared to the low inductance blade POL module, the standard module had 65% higher voltage overshoot and 30% higher total switching losses. Second, the switching performance of the 150A, 1200V fast IGBT, in either standard silicon or the hybrid blade module, was compared with the all-SiC blade module under the same test conditions. The IGBT switching losses of the standard silicon module were 3.5 times higher, while the hybrid blade module losses were 2.5 times higher than those of the all-SiC module. The new low inductance blade module is an excellent package for the new generation of fast silicon IGBTs and the emerging SiC power devices. The module will enable efficient power conversion at significantly higher switching frequencies and power densities.

show abstract

Section: Q1mentioning

confidence: 99%

“…The POL fabrication process is described in [8]. The module includes an integral heat sink that provides a significantly better thermal performance over cold plates used in conventional modules [11].…”

Section: Detailed Designmentioning

confidence: 99%

Low inductance power module with blade connector

Stevanovic

Beaupre

Delgado

et al. 2010

2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

View full text Add to dashboard Cite

show abstract

“…10 shows the power module assembly prior to soldering the substrate to the baseplate and power devices to the substrate. The devices are shown without (upper) and with (lower) power overlay topside interconnect [9]. Both soldering steps, the substrate to the baseplate and power overlay to the substrate, were performed simultaneously using a 63%Sn/37%Pb solder.…”

Section: B Heat Sink Baseplate Fabricationmentioning

confidence: 99%

Integral micro-channel liquid cooling for power electronics

Stevanovic

Beaupre

Gowda

et al. 2010

2010 Twenty-Fifth Annual IEEE Applied Power Electronics Conference and Exposition (APEC)

View full text Add to dashboard Cite

A novel integral micro-channel heat sink was developed, featuring an array of sub-millimeter channels fabricated directly in the back-metallization layer of the direct bond copper or active metal braze ceramic substrate, thus minimizing the material between the semiconductor junction and fluid and the overall junction-to-fluid thermal resistance. The ceramic substrate is bonded to a baseplate that includes a set of interleaved inlet and outlet manifolds for uniform fluid distribution across the actively cooled area of the heat sink. The interleaved manifolds greatly reduce the pressure drop and minimize temperature gradient across the heat sink surface. After performing detailed simulations and design optimization, a 200 A, 1200 V IGBT power module with the integral heat sink was fabricated and tested. The junction-to-fluid thermal resistivities for the IGBTs and diodes were 0.17°C*cm 2 /W and 0.14°C*cm 2 /W, respectively. The design is superior to all reported liquid cooled heat sinks with a comparable material system, including the micro-channel designs. It is also easily scaleable to larger heat sink surfaces without compromising the performance.

show abstract

“…This technique interconnects power devices with direct metallurgical contacts to the chip pads [115]. Cross-sectional views of the module at various stages of the fabrication process are shown below.…”

Section: Figure 18mentioning

confidence: 99%

“…Also, resistive and inductive interconnect parasitics are reduced by this structure. Lastly, the planar structure eliminates unnecessary structures in the cooling path, which greatly improves the thermal performance of the modules [115]. However, it is susceptible to the same failure mechanisms related to direct copper attach, die attach fatigue, and substrate cracking, and it has the same limitations in use temperature due to the choice of polymer dielectrics.…”

Section: Figure 18mentioning

confidence: 99%

Power Modulation Investigation for High Temperature (175-200 degrees Celcius) Automotive Application

McCluskey¹

2007

View full text Add to dashboard Cite

High power planar interconnect for high frequency converters

Cited by 13 publications

References 2 publications

Low inductance power module with blade connector

Low inductance power module with blade connector

Integral micro-channel liquid cooling for power electronics

Power Modulation Investigation for High Temperature (175-200 degrees Celcius) Automotive Application

Contact Info

Product

Resources

About