High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser

Rafailov, Edik U.; Cataluna, Maria Ana; Sibbett, W.; Il’inskaya, N. D.; Zadiranov, Yu. M.; Zhukov, A. E.; Ustinov, V. M.; Livshits, D.A.; Kovsh, A. R.; Ledentsov, N. N.

doi:10.1063/1.2032608

Cited by 137 publications

(50 citation statements)

References 7 publications

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“…The devices for ML have usually a long amplifier section and a short absorber section with a typical ratio 6 to 1. 10 The other parameters are conventional for QD materials and geometry. They are specified in the figure caption.…”

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confidence: 99%

Model for mode locking in quantum dot lasers

Viktorov

Mandel

Vladimirov

et al. 2006

Applied Physics Letters

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We propose a model for passive mode locking in quantum dot lasers and report on specific dynamical properties of the regime which is characterized by a fast gain recovery. No Q-switching instability has been found accompanying the mode locking. Bistability can occur between the mode locking regime and the nonlasing state. © 2006 American Institute of Physics. ͓DOI: 10.1063/1.2203937͔ Lasers and amplifiers based on self-assembled quantum dots attract significant attention due to reduced threshold current, low chirp, weak temperature dependence, 1 and a reduced sensitivity to optical feedback 2 at telecom wavelengths. Among the regimes displayed by multimode lasers, passive mode locking ͑ML͒ is a powerful method to generate short pulses for time domain multiplexing and for optical comb generator. The first experiments have been reported on ML in quantum dot ͑QD͒ lasers at 1.3 m up to 50 GHz ͑Refs. 3 and 4͒ and demonstrated their superiority to quantum well lasers for network applications. 5 The physics of the passive ML in a QD laser remains the same as in other lasers: the absorbing medium saturates faster than the amplifying one, and, therefore, a short window of net gain emerges for the pulse amplification. 6 However, the nonlinear dynamics of ML depends on the specific characteristics of QD material and deserves detailed theoretical analysis in order to optimize QD lasers for practical applications.In this letter we construct a delay differential model to describe ML in quantum dot lasers using the approach proposed in Refs. 7 and 8. In our model the dynamics of each of the two quantum dot laser sections, gain and absorber, is governed by two rate equations for the time evolution of the quantum dot occupation probabilities and the carrier densities in the wetting layer. We find that ML in quantum dot lasers exhibits specific dynamical properties which we associate with the escape and the capture processes in the quantum dot material. In particular, we explain the absence of the low frequency Q-switching instability and the existence of bistability between the ML regime and the nonlasing state.Let us consider a ring laser consisting of three sections. The first section with the length L q , and the second section with the length L g , contain the saturable absorber and the gain medium, respectively. The third section acts as a spectral filter that limits the bandwidth of the laser radiation. The equations describing the evolution of the electric field envelope A͑t͒ at the entrance of the absorber section can be written in the form 7where A͑t͒ is the normalized complex amplitude of the electric field, ␥ is the dimensionless bandwidth of the spectral filtering section, and ␣ g ͑␣ q ͒ is the linewidth enhancement factors in the gain ͑absorber͒ section. The delay parameter T is equal to the cold cavity round trip time. The attenuation factor Ͻ 1 describes total nonresonant linear intensity losses per cavity round trip.The variables G͑t͒ and Q͑t͒ are the dimensionless saturable gain and absorption:where the variable...

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confidence: 99%

Model for mode locking in quantum dot lasers

Viktorov

Mandel

Vladimirov

et al. 2006

Applied Physics Letters

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“…This is due to the strong coupling of the real and imaginary parts of the refractive index in the gain section of semiconductor LDs. In order to avoid this problem, a bisectional laser diode (BS-LD) using a quantum dot active layer was used to generate 390-fs optical pulses [8]. Intracavity dispersion compensation is another technique for reducing chirp in optical pulses from MLLDs.…”

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confidence: 99%

Intensity Correlation Analysis on Blue-Violet FemtosecondPulses from a Dispersion-Compensated GaInN Mode-LockedSemiconductor Laser Diode

Kono¹,

Koda²,

Watanabe³

et al. 2015

Applied Sciences

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Abstract:We investigated the spectral and temporal characteristics of blue-violet femtosecond optical pulses generated by a passively mode-locked GaInN laser diode in a dispersion-compensated external cavity. The output optical pulses at 400 nm were analyzed in detail by intensity auto-and cross-correlation measurements using second harmonic generation on the surface of a β-BaB2O4 crystal. The obtained results clarified wavelength-dependent chirp characteristics of the optical pulses. The analysis suggested that a large frequency shift due to saturation in the saturable absorber and gain sections played an important role in the generation of femtosecond optical pulses.

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“…Low threshold current density (<12 A/cm 2 ) 10 and high temperature stability (T 0 > 650 K) 11 have been demonstrated. Multi-section monolithic mode-locked QD lasers have shown pulse-widths as low as 400 fs 12 with repetition rates over 200 GHz. 13 Recently, stable passively mode-locked laser (MLL) operation from the excited state (ES) has been demonstrated.…”

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Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices

Thoma

Liang

Lewis

et al. 2013

Applied Physics Letters

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We characterize the electro-optical and lasing properties of a hybrid material consisting of multiple InAs quantum dot (QD) layers together with an InGaAs quantum well (QW) grown on a GaAs substrate. Over 40 nm Stark shift of the InGaAs QW leading to 9 dB extinction ratio was demonstrated. Lasing operation at the QD first excited state transition of 1070 nm was achieved and together with < 10 ps absorption recovery the system shows promise for high-speed mode-locked lasers and electro-modulated lasers. (C) 2013 American Institute of Physics. (http://dx.doi.org/10.1063/1.4791565

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High-power picosecond and femtosecond pulse generation from a two-section mode-locked quantum-dot laser

Abstract: We demonstrate mode locking in a two-section quantum-dot laser that produces output powers up to 45 mW at 1260 nm. The pulse duration could be varied from 2 ps to as short as 400 fs at the 21 GHz pulse repetition rate.

Cited by 137 publications

References 7 publications

Model for mode locking in quantum dot lasers

Model for mode locking in quantum dot lasers

Intensity Correlation Analysis on Blue-Violet FemtosecondPulses from a Dispersion-Compensated GaInN Mode-LockedSemiconductor Laser Diode

Electro-optical and lasing properties of hybrid quantum dot/quantum well material system for reconfigurable photonic devices

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