High-power microwave GaN/AlGaN HEMTs on semi-insulating silicon carbide substrates

Sheppard, S.T.; Doverspike, K.; Pribble, W.L.; Allen, Scott T.; Palmour, John W.; Kehias, L.; Jenkins, T.

doi:10.1109/55.753753

Cited by 509 publications

(183 citation statements)

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“…The effective thermal conductivity of this layer was defined as K = h/R B , where R B is TBR at the GaN-SiC interface. We adopted R B = 1.5×10 − 8 m 2 K W − 1 from the reported experimental studies [24][25][26] . The heat diffusion was simulated by numerically solving the Fourier's equation with proper boundary conditions.…”

Section: Methodsmentioning

confidence: 99%

Graphene quilts for thermal management of high-power GaN transistors

et al. 2012

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self-heating is a severe problem for high-power gallium nitride (Gan) electronic and optoelectronic devices. Various thermal management solutions, for example, flip-chip bonding or composite substrates, have been attempted. However, temperature rise due to dissipated heat still limits applications of the nitride-based technology. Here we show that thermal management of Gan transistors can be substantially improved via introduction of alternative heat-escaping channels implemented with few-layer graphene-an excellent heat conductor. The graphene-graphite quilts were formed on top of AlGan/Gan transistors on siC substrates. using micro-Raman spectroscopy for in situ monitoring we demonstrated that temperature of the hotspots can be lowered by ~20 °C in transistors operating at ~13 W mm − 1 , which corresponds to an order-of-magnitude increase in the device lifetime. The simulations indicate that graphene quilts perform even better in Gan devices on sapphire substrates. The proposed local heat spreading with materials that preserve their thermal properties at nanometre scale represents a transformative change in thermal management.

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Section: Methodsmentioning

confidence: 99%

Graphene quilts for thermal management of high-power GaN transistors

et al. 2012

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“…A number of groups have been able to demonstrate GaN HEMT power levels in excess of 5W/mm [93][94][95], which can help alleviate the power combining issues. Another advantage of using GaN-based electronics is that its device impedance matching solutions become easier and more compact when the device is operated at higher drain voltages.…”

Section: Algan/gan Hemtsmentioning

confidence: 99%

High Al-Content AlInGaN Devices for Next Generation Electronic and Optoelectronic Applications

Baca¹,

Briggs²,

Allerman³

et al. 2001

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“…1,2 The characteristics of devices with c-plane GaN are highly affected by strong spontaneous and piezoelectric polarizations along the c-axis. For example, the strong built-in electric fields generated by these polarizations cause an undesirable redshift in the radiation frequency through the quantum confined Stark effect 3 and the degradation of luminous efficiency due to the spatial separation of electrons and holes 4 in heterostructure light-emitting diodes (LEDs) based on c-plane GaN.…”

mentioning

confidence: 99%