High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement

Andreev, A. L.; Zorina, S. A.; Leshko, A. Yu.; Lyutetskiy, A. V.; Маrmalyuk, А. А.; Murashova, A. V.; Nalet, T. A.; Падалица, А. А.; Pikhtin, N. A.; Сабитов, Д. Р.; Симаков, В. А.; Slipchenko, S. O.; Telegin, K. Yu.; Shamakhov, V. V.; Tarasov, I. S.

doi:10.1134/s1063782609040216

Cited by 9 publications

(2 citation statements)

References 18 publications

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“…To avoid the accumulated heat in the thin waveguide [18], the NES laser power is obtained driven by short pulse current as shown is Figure 5. The linear fitting result (dotted line) shows that the slope efficiency (SE) of the laser can reach 3.55 W/A under 10 ns width pulse current.…”

Section: The Experimental Resultsmentioning

confidence: 99%

Beam parameter product optimization of densely arranged multi‐emitter tunnel junction cascaded laser

Wang

Zhang

et al. 2023

Electronics Letters

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A tunnel junction cascaded semiconductor laser with thin waveguide and narrowed spacing between adjacent emitters is designed in this work. It can be concluded theoretically that the spatial size of the spots arrangement in fast axis has a greater impact on the vertical beam parameter product (BPP) of the multi-emitter cascaded laser than the divergence angle. The measured vertical BPP of the designed narrow emitter spacing (NES) laser has been reduced 42.5%, which implies that the beam quality performance of the laser has been improved and proves the feasibility of this method. Meanwhile, the slope efficiency of the thin waveguide NES laser can reach up to 3.55 W/A under 10 ns duration pulse current.

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Section: The Experimental Resultsmentioning

confidence: 99%

Beam parameter product optimization of densely arranged multi‐emitter tunnel junction cascaded laser

Wang

Zhang

et al. 2023

Electronics Letters

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“…The laser we are modelling has dimensions, structure and doping as described by Andreev, et al [4], [5]. The lasing wavelength is 808nm, the lasing offset voltage U 0 is 1.56−1.60V , differential resistance just above the lasing offset, r = dU/dI, is 50 − 80mΩ, threshold current I th is 200 − 300mA, slope of optical power, S = dL/dI, is 1.15−1.25W/A, and left and right mirror reflection coefficients R l and R r are 0.05 and 0.95.…”

Section: Modellingmentioning

confidence: 99%

The role of quantum-well states and carrier scattering times on discontinuities in opto-electrical characteristics of SCH lasers

Koziol,

Matyukhin,

Buduleva

2013

Preprint

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Drift-diffusion computer simulations model available in Synopsys' Sentaurus TCAD is used to study electrical, I-V, and optical, I-L, characteristics of separate-confinement heterostructure laser based on AlGaAs. We investigate the role of the width and depth of Quantum Well (QW) active region, below and above the lasing threshold. The device properties depend on both, the number of bound QW states and on closeness of the highest bound states to conduction or valence band offset. The lasing action may not exist at certain widths or hights of QW, and the threshold current is a discontinuous function of these parameters. The effects are more pronounced at low temperatures. Discontinuities in characteristics are found, at certain conditions, in temperature dependencies as well. The carriers scattering time on QW is shown to have the crucial role on amplitude of discontinuities.

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Effect of (Al)GaAs/AlGaAs quantum confinement region parameters on the threshold current density of laser diodes

Ладугин¹,

Маrmalyuk²

2019

Quantum Electron.

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An approach has been proposed for choosing parameters (width and depth) of an (Al)GaAs/AlGaAs quantum confinement region via calculation of the threshold current density of a semiconductor laser. A detailed assessment of its components has made it possible to find criteria for optimising the range of quantum well widths so as to minimise the threshold current for lasers with different heterostructure geometries. The data presented in this paper demonstrate the feasibility of further improving output characteristics of semiconductor lasers by optimising the design and technology of quantum well heterostructures. Owing to this, we have simultaneously reduced the threshold current, carrier escape and internal optical loss, which has allowed us to obtain high (60 % to 70 %) efficiencies of a semiconductor laser operating in the spectral range 800 – 850 nm.

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High-power lasers (γ = 808 nm) based on the AlGaAs/GaAs heterostructures of separate confinement

Cited by 9 publications

References 18 publications

Beam parameter product optimization of densely arranged multi‐emitter tunnel junction cascaded laser

Beam parameter product optimization of densely arranged multi‐emitter tunnel junction cascaded laser

The role of quantum-well states and carrier scattering times on discontinuities in opto-electrical characteristics of SCH lasers

Effect of (Al)GaAs/AlGaAs quantum confinement region parameters on the threshold current density of laser diodes

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