High-power laser structures grown on bulk GaN crystals

Bulk GaN crystal growth by the high-pressure ammonothermal method

“…Epitaxial AlGaN/InGaN layers were deposited on the wafers by MOCVD according to procedures described elsewhere [28]. Vertical metallic contacts were deposited by sputtering and were subsequently annealed to achieve ohmic behavior.…”

Determination of GaN solubility in supercritical ammonia with NH4F and NH4Cl mineralizer by in situ x-ray imaging of crystal dissolution

“…The availability of native GaN substrates of very low defect density is essential for improving the performance, yield and lifetime of optoelectronic and electronic GaN-based devices [1,2], in particular reliability of high-power laser diodes [3]. A promising method for obtaining high-quality GaN bulk single crystals is solution growth using supercritical ammonia as a solvent, i.e., the ammonothermal method.…”

Effects of Mg dopant on the degradation of InGaN multiple quantum wells in AlInGaN-based light emitting devices

“…Generally, the epitaxial growth of III-nitrides has focused on the improvement of optical and crystal qualities of InGaN multi-quantum wells (MQWs) since they are used as active medium of AlInGaN-based laser diodes (LDs) as a lighting source for optical storage system and mobile display systems [1][2][3][4][5][6][7]. Recently, although the reliability of AlInGaN-based LDs has been drastically improved by the introduction of GaN substrate with low dislocation density, there are some reliability problems in the AlInGaN-based LD/LEDs [1].…”

“…Recently, although the reliability of AlInGaN-based LDs has been drastically improved by the introduction of GaN substrate with low dislocation density, there are some reliability problems in the AlInGaN-based LD/LEDs [1]. The reliability of device is determined by the weakest part of the device and depends on factors ranging from material properties to processing technologies.…”