High-power laser diodes (λ = 808–850 nm) based on asymmetric separate-confinement heterostructures

Modified exponential I(U) dependence and optical efficiency of AlGaAs SCH lasers in computer modeling with Synopsys TCAD

“…We find from data analysis, for instance for the third dataset in Figure 1, that dU/dI ≈ 50mΩ, which, together with estimated contact resistance R x = 13mΩ gives good qualitative agreement with the differential resistance expected for real lasers, where it is in the range of about 50 − 80mΩ ( [5] and [6]).…”

“…Next [3], we have shown how to considerably improve their electrical and optical parameters by finding the most optimal QW width and waveguides widths, and type and level of doping [4]. We compared computed properties with these of lasers produced by Polyus research institute in Moscow [5], [6]. By changing the waveguide profile through introducing a gradual change of Al concentration, as well variable doping profiles, we were able to decrease significantly the lasing threshold current, increase the slope of optical power versus current, and increase optical efficiency.…”

Quantum-well states and discontinuities in opto-electrical characteristics of SCH lasers

“…The laser we are modelling has dimensions, structure and doping as described by Andreev, et al [3], [4]. The lasing wavelength is 808nm.…”

The effects of multiply quantum wells (MQW) on optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures (SCH)

“…Next [3], several changes in structure and doping of SCH AlGaAs lasers have been shown to considerably improve their electrical and optical parameters. We compared computed properties with these of lasers produced by Polyus research institute in Moscow [4], [5]. In particular, by changing the width of active region (Quantum Well), waveguide width, doping concentration in all laser layers, as well by changing the waveguide profile by introducing a gradual change of Al concentration, and also by introducing variable doping profile of carriers across waveguide, we were able to decrease significantly the lasing threshold current, increase the slope of optical power versus current, and increase optical efficiency up to about 74 % [6].…”

“…By using Synopsys's Sentaurus TCAD, and open source software we performed computer modeling of optical and electrical characteristics of AlGaAs lasers with separate confinement heterostructures, when 2 and 3 quantum wells are present. We compared results with these for 1-QW laser calibrated to reproduce characteristics of lasers produced at Polyus research institute in Moscow ( [4] and [5]).…”