High power InGaAsP/InP 1.625 μm strained quantum well lasers

Munakata, T.; Kashima, Y.; Kusumoto, S.; Matoba, A.; Takano, Hiroshi

doi:10.1109/iciprm.1995.522188

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“…This paper is considered a supplement to our earlier 10 The paper is structured as follows. In section 2, the structures and fabrications are described.…”

Section: Introductionmentioning

confidence: 99%

<title>1.625-um high-power lasers for OTDR monitoring systems for optical transmission lines</title>

et al. 1996

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An optical power of over 160 mW has been successfully achieved using 1.625-p.m strained multiple quantum well lasers at a forward current of 800 mA in pulsed operation. Such high power is achieved by optimizing the separated confinement heterostructure layer thickness. The operating life of high power I .625-gm lasers has been estimated from the results of accelerated aging at 45 °C , and 300 mA and 500 mA under continuous-wave operation. No significant change in optical output power was observed up to 4500 hours. The mean-time-to-failure at driving currents of 300 mA and 500 mA, at an ambient temperature of 45 °C, are estimated to be about 4.2x1O' hours and 3.5xl O hours, respectively.

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“…This paper is considered a supplement to our earlier 10 The paper is structured as follows. In section 2, the structures and fabrications are described.…”

Section: Introductionmentioning

confidence: 99%