High power inductive charging system for an electric taxi vehicle

Henke, Markus; Dietrich, T.

doi:10.1109/itec.2017.7993242

Cited by 6 publications

(4 citation statements)

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“…T HE increased demand for more reliable and efficient power conversion systems [1], [2], with focus on more efficient semiconductor power switch, which being the main component in the system determines the overall performance, reliability and efficiency of the whole system [3], promotes wide bandgap semiconductors, such as Silicon Carbide (SiC) and G Gallium Nitride (GaN), as prime candidates to replace the traditional Silicon (Si) technology [4]. GaN-based High Electron Mobility Transistors (HEMTs) are considered to be the future power semiconductor switches [5], [6] at least for voltage operation range up to 650 V. However, the higher GaN cost and poorer reliability compared to Si counterparts are two major obstacles hindering the much anticipated wide commercialization of GaN power switches [7], [8].…”

Section: Introductionmentioning

confidence: 99%

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

Alshahed

Heuken

Alomari

et al. 2018

IEEE Trans. Electron Devices

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Abstract-In this work the advantages of GaN HEMTs grown on native GaN substrates over GaN/Si or GaN/Sapphire substrates are investigated, and correlated with epitaxial quality. TEM plane view and cross section analysis of GaN/GaN revealed dislocation density lower than 1 × 10 6 cm −2 , which is at least 3 orders of magnitude lower than the case of GaN/Si or GaN/Sapphire. In the case of GaN/Si, the dislocations did not necessarily originate from the substrate/nucleation layer interface, but the strain relief and isolation buffer stacks were main contributors to the dislocation density. GaN/GaN HEMTs demonstrated superior electrical and thermal performance. GaN/GaN demonstrated 3 orders of magnitude lower off-state leakage, current collapse (Ron increase) after stress bias less than 15% compared to 50% in the case of GaN/Si, and 2% drop of the onstate current due to self-heating in DC operation as compared to 13% and 16% for GaN/Si and GaN/Sapphire respectively. The GaN/Si thermal performance approached GaN/GaN only by substrate removal. Therefore GaN/GaN can allow high on-state current, low off-state leakage current, minimal current collapse, and enhanced thermal dissipation capability at the same time, which can be directly correlated to the absence of high dislocation densities.

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Section: Introductionmentioning

confidence: 99%

Low-Dispersion, High-Voltage, Low-Leakage GaN HEMTs on Native GaN Substrates

Alshahed

Heuken

Alomari

et al. 2018

IEEE Trans. Electron Devices

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“…Some alternative solutions, like inductive charging and BSSs, have been developed but are not universally available in all markets. The inductive charging technology is currently being investigated for both light and heavy-duty vehicles in static and dynamic conditions, for example in 'Arena del Futuro' project [15,16]. BSS first appeared in 2012 in Israel by Better Place and later in the United States with Tesla [17,18].…”

mentioning

confidence: 99%

Electrifying Urban Transportation: A Comparative Study of Battery Swap Stations and Charging Infrastructure for Taxis in Chicago

Borgosano,

Martini,

Longo

et al. 2024

IEEE Access

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In recent years, the Electric Vehicles (EVs) industry has experienced rapid growth, driven by advancements in battery technology, environmental awareness, and government incentives. However, traditional charging infrastructure's limited availability and long charging times pose significant challenges, especially for long-distance travel and public service vehicles like taxis, buses, and law enforcement vehicles. This work explores the innovative concept of Battery Swap Stations (BSSs), an emerging technology poised to transform the EV charging landscape. It specifically focuses on electric taxis operating in Chicago's urban environment, highlighting the substantial benefits this technology can offer. BSSs demonstrated to dramatically reduce charging times, improving taxi service efficiency and increasing revenue potential. Instead, conductive charging impacts the working time of taxis across all case studies (as observed in the Level 2 charger scenario) While BSS technology has its drawbacks, such as optimal location challenges and battery management complexities, it has the potential to significantly enhance service quality. Additionally, these stations hold the promise of not only increasing urban transportation system efficiency but also contributing to their sustainability.

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“…There are already five inductive charging stations for EB charging. The main goals are the conceptual design and the required measurements to charge ETs on the proprietary EMIL charging stations, considering the development of a system that can be applied to a variety of different vehicles [118].…”

mentioning

confidence: 99%