High-Power Indium Phosphide Photonic Integrated Circuits

Zhao, Huajun; Pinna, Sergio; Sang, Fengqiao; Song, Bowen; Brunelli, Simone Tommaso Šuran; Coldren, L.A.; Klamkin, Jonathan

doi:10.1109/jstqe.2019.2908788

Cited by 31 publications

(20 citation statements)

References 43 publications

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“…To date, one of the biggest challenges faced by programmable silicon photonics is the integration of low-loss non-volatile components in applications such as quantum computing [18,20,21], microwave photonics [14], neuromorphic computing [22,23], Internet of Things (IoT) [24], and machine learning [25]. Silicon nitride (SiNx) is one of the three currently commercially viable photonic platforms [26], the other two being silicon [27] and indium phosphide [28,29]. SiNx provides an alternative low-cost CMOS compatible platform and similar to the silicon platform all fundamental non amplifying photonic components can be implemented [30].…”

Section: Introductionmentioning

confidence: 99%

Towards low loss non-volatile phase change materials in mid index waveguides

Faneca

Zeimpekis

Ilie

et al. 2021

Neuromorph. Comput. Eng.

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Photonic integrated circuits currently use platform intrinsic thermo-optic and electrooptic effects to implement dynamic functions such as switching, modulation and other processing. Currently, there is a drive to implement field programmable photonic circuits, a need which is only magnified by new neuromorphic and quantum computing applications. The most promising non-volatile photonic components employ phase change materials such as GST and GSST, which had their origin in electronic memory. However, in the optical domain, these compounds introduce significant losses potentially preventing a large number of applications. Here, we evaluate the use of two newly introduced low loss phase change materials, Sb 2 S 3 and Sb 2 Se 3 , on a silicon nitride photonic platform. We focus the study on Mach-Zehnder interferometers that operate at the O and C bands to demonstrate the performance of the system. Our measurements show an insertion loss below 0.04 dB/µm for Sb 2 S 3 and lower than 0.09 dB/µm for Sb 2 Se 3 cladded devices for both amorphous and crystalline phases. The effective refractive index contrast for Sb 2 S 3 on SiNx was measured to be 0.05 at 1310 nm and 0.02 at 1550 nm, whereas for Sb 2 Se 3 , it was 0.03 at 1310 nm and 0.05 at 1550 nm highlighting the performance of the integrated device.

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Section: Introductionmentioning

confidence: 99%

Towards low loss non-volatile phase change materials in mid index waveguides

Faneca

Zeimpekis

Ilie

et al. 2021

Neuromorph. Comput. Eng.

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“…64 Outra aplicação importante do InP é o seu uso como substrato para células solares, como é o caso do arseneto de índio e gálio (InGaAs). 65 Os semicondutores InAsSb, InTlSb, InSbBi, InTlAsSb e InAsGaSb têm sido utilizados em lasers de infravermelho. 14 Os nitretos e os fosfetos de índio-gálio (InGaN e InGaP) são usados em diodos de laser e diodos emissores de luz (LEDs).…”

Section: Fotoeletrocatáliseunclassified

Índio: Uma Visão Científica E Tecnológica De Um Metal Estratégico

et al. 2019

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Indium have been widely investigated by scientists because of its several interesting properties and its use in different applications in the manufacture of TVs screens, computers, cell phones, solar panels, electroluminescent diodes (LEDs), organic electroluminescent diodes (OLEDs), DNA and antibody sensors, electrocatalysts, architectural glass coatings, low melting alloys, thermal interface materials, aircraft engine bearings, among others. The economic urge to make devices more cost effective and efficient has guide developments in different deposition technologies, such as dip-coating, plating, thick and thin film deposition. However, indium is classified as a critical metal. In this sense, we discussed the economic viability and spatial distribution of the indium resources in Brazil and worldwide considering that its supply still remains a concern. On top of that, the present review discusses the scientific and technological aspects of indium materials and highlights the major advances regarding their synthesis, properties and applications.

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“…The EAMs, operating on the basis of the quantum-confined Stark effect (QCSE), have the advantages of compactness, high modulation efficiency and low power consumption. Various monolithic integration schemes have been devised aiming to achieve stable, reliable and efficient electro-absorption modulated lasers (EML), such as butt-joint regrowth (BJR) [1], [2], selective area growth (SAG) [3], dual quantum wells (DQW) [4], offset quantum wells (OQW) [5], asymmetric twin waveguide (ATW) [6], and quantum well intermixing (QWI) [7], [8]. Among these techniques, BJR, SAG and DQW all have a different layer stack for EAM, allowing the quantum wells (QWs) of the laser and modulator to be designed independently for individual optimization.…”

Section: Introductionmentioning

confidence: 99%

Widely Tunable Electro-Absorption Modulated V-Cavity Laser

Zhang

Xia

Meng³

et al. 2019

IEEE Photonics J.

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We report a widely tunable V-cavity laser monolithically integrated with an electroabsorption modulator (EAM). The device shows a 41-nm wavelength tunability covering 51 channels at 100 GHz spacing on the ITU grid, with a side-mode suppression ratio (SMSR) higher than 47 dB. Error-free transmission over 50 km standard single-mode fiber at 10 Gb/s is demonstrated at all wavelengths over the tuning range. The integrated EAM exhibits a dynamic extinction ratio higher than 12.5 dB. The bit-error-rate measurements show a power penalty less than 3 dB for 50-km transmission. The results demonstrate that this ultra-compact and regrowth-free electro-absorption modulated tunable laser can be a costeffective transmitter solution for DWDM metropolitan and access networks.

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High-Power Indium Phosphide Photonic Integrated Circuits

Cited by 31 publications

References 43 publications

Towards low loss non-volatile phase change materials in mid index waveguides

Towards low loss non-volatile phase change materials in mid index waveguides

Índio: Uma Visão Científica E Tecnológica De Um Metal Estratégico

Widely Tunable Electro-Absorption Modulated V-Cavity Laser

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