High-power highly reliable Al-free 940-nm diode lasers

Erbert, G.; Beister, G.; Hülsewede, R.; Knauer, A.; Pittroff, W.; Sebastian, J.; Wenzel, H.; Weyers, M.; Tränkle, G.

doi:10.1109/2944.954122

Cited by 32 publications

(4 citation statements)

References 8 publications

Supporting

Mentioning

Contrasting

Order By: Relevance

“…Indeed, single transverse-mode operation was successfully realized in lasers with OCLs of a larger thickness ͓h = 1.3 m at = 0.98 m, 5 h =1-1.5 m at = 0.94 m, 6 and h = 1.7 m at = 1.06 m Ref. 7͔, using mode selection by means of leakage loss discrimination 5,6 or asymmetric active layer position in the OCL. 7 These constructions allowed record values of output power, with good beam directionality, to be realized.…”

Section: Introductionmentioning

confidence: 97%

Effect of carrier loss through waveguide layer recombination on the internal quantum efficiency in large-optical-cavity laser diodes

Ryvkin

Avrutin

2005

Journal of Applied Physics

View full text Add to dashboard Cite

An analytical treatment for carrier distribution in optical confinement layers (OCLs) of semiconductor lasers with bimolecular recombination is developed. On the basis of this approach, the effect of OCL recombination on the internal quantum efficiency of a laser is evaluated. It is shown that this effect can lead to a rapid deterioration in efficiency with increased waveguide thickness at high enough currents, and also contributes to the efficiency decrease with current in a given structure. An asymmetric, narrow waveguide structure is shown to avoid this problem while still providing a good-quality beam.

show abstract

Section: Introductionmentioning

confidence: 97%

Effect of carrier loss through waveguide layer recombination on the internal quantum efficiency in large-optical-cavity laser diodes

Ryvkin

Avrutin

2005

Journal of Applied Physics

View full text Add to dashboard Cite

show abstract

“…A large spot size of the mode in both transverse directions would enormously increase brightness and reduce thermal effects, avoid catastrophic optical mirror damage and optical nonlinearities, facilitate direct coupling into optical fibers, as well as improve various external cavity applications. A number of different approaches to extend the lasing mode and reduce beam divergence for edge-emitting lasers have been proposed [1][2][3][4][5][6]. The problem of avoiding poor beam quality and simultaneously obtaining high power remains however unresolved.…”

Section: Introductionmentioning

confidence: 99%

Simulations of the optical properties of broad-area edge-emitting semiconductor lasers at 1060 nm based on the PBC laser concept

Kalosha

Posilovic

Kettler

et al. 2011

Semicond. Sci. Technol.

View full text Add to dashboard Cite

The design principles of multi-stripe edge-emitting lasers based on the photonic band crystal (PBC) laser concept are evaluated numerically. The concept is based on a waveguide with a thick quasi-periodic sequence of alternating high-and low-index layers allowing mode expansion across the whole layer sequence. Effective ways to filter out higher-order modes via control of the confinement and leakage are demonstrated as well as enhanced lateral mode selectivity of multi-stripe lasers by changing their etching profile. Thus, for proper epitaxial and lateral design PBC lasers have an enormous potential to provide high-power/brilliance single-mode radiation with broad-area output spot size and nearly circular narrow far-field pattern.

show abstract

“…Several approaches such as aluminum free laser structures, lasers with tapered gain sections, and broad waveguide structures are being followed. [5][6][7][8] One important focus lies on expanding the vertical waveguide. This leads to an increase in the maximum single mode output power as well as to a reduction in the vertical far field and therefore results in higher brightness in single mode operation.…”

mentioning

confidence: 99%

“…In addition, low-cost optics can be used yielding high coupling efficiency. Previously, such attempts 9,10 based on the above concepts [5][6][7][8] resulted in a reduced vertical beam divergence down to 15°. A completely other type of waveguide structure for decreasing the vertical far field divergence was proposed recently by some of us.…”

mentioning

confidence: 99%

Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes

Posilovic

Kettler

Shchukin

et al. 2008

Applied Physics Letters

Self Cite

View full text Add to dashboard Cite

One-dimensional photonic crystal lasers emitting in the 850 nm range show high internal quantum efficiencies of 93% and very narrow vertical beam divergence of 7.1°͑full width at half maximum͒. 50 m broad area lasers with unpassivated facets exhibit a high total output power of nearly 20 W in pulsed mode with a divergence of 9.5°ϫ 11.3°leading to a record brightness of 3 ϫ 10 8 W cm −2 sr −1 , being presently the best value ever reported for a single broad area laser diode. 100 m broad devices with unpassivated facets show continuous wave operation with an output power of 1.9 W.

show abstract

High-power highly reliable Al-free 940-nm diode lasers

Cited by 32 publications

References 8 publications

Effect of carrier loss through waveguide layer recombination on the internal quantum efficiency in large-optical-cavity laser diodes

Effect of carrier loss through waveguide layer recombination on the internal quantum efficiency in large-optical-cavity laser diodes

Simulations of the optical properties of broad-area edge-emitting semiconductor lasers at 1060 nm based on the PBC laser concept

Ultrahigh-brightness 850 nm GaAs/AlGaAs photonic crystal laser diodes

Contact Info

Product

Resources

About