High-power, high-efficiency silicon avalanche diodes at ultra high frequencies

Prager, H. J.; Chang, K. K. N.; Weisbrod, Samuel H.

doi:10.1109/proc.1967.5609

Cited by 114 publications

(12 citation statements)

References 4 publications

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“…From Eq. (1), we can estimate the depletion width W, (2) where c = 1.7 is obtained from the condition γ p /γ n = 0.5.…”

Section: Oscillation Generationmentioning

confidence: 99%

“…Most commonly used are ava lanche diodes (ADs) and trapped plasma avalanche triggered transit (TRAPATT) diodes. The latter type is essentially an avalanche diode operating in the so called trapped plasma avalanche triggered transit (TRAPATT) mode [2]. The operation mechanism of both diode types is based on the phenomenon of ion ization breakdown of the semiconductor under a strong electric field.…”

Section: Introductionmentioning

confidence: 99%

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Generation of powerful microwave voltage oscillations in a diffused silicon diode

et al. 2013

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Abstract-The mechanism of the generation of powerful microwave voltage oscillations in a diffused silicon diode is studied. A reverse current 2 kA in amplitude is passed through a 0.5 cm 2 diode with a structure thick ness of 320 µm, a p-n junction depth of 220 µm. At an average diode voltage of ~300 V and a microwave pulse duration of ~200 ns, the maximum voltage swing reaches 480 V. The oscillation frequency lies in the range 5 to 7 GHz; the power of the microwave pulse component is ~300 kW. A theoretical consideration shows that voltage oscillations are caused by periodically repeating processes of breakdown and structure filling with plasma followed by its removal by the reverse current. The frequency and voltage swing are controlled by the current density and dopant concentration gradient in the vicinity of the p-n junction.

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“…From Eq. (1), we can estimate the depletion width W, (2) where c = 1.7 is obtained from the condition γ p /γ n = 0.5.…”

Section: Oscillation Generationmentioning

confidence: 99%

Section: Introductionmentioning

confidence: 99%

Generation of powerful microwave voltage oscillations in a diffused silicon diode

et al. 2013

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“…TRAPATT diodes were invented in [1] as high-power microwave devices working with high efficiency. The best achieved result on efficiency (75 percent) was reported in [2].…”

Section: Introductionmentioning

confidence: 99%

Simulation of silicon n+np+, p+pn+ and Schottky TRAPATT diodes

Vyšniauskas¹,

Matukas²

2014

Lith. J. Phys.

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, and Schottky TRAPATT (TRApped Plasma Avalanche Triggered Transit) diodes were simulated. The drift-diffusion model was chosen for the simulation of the processes. We show that the minority carrier storage depends on the TRAPATT diode structure. The most intensive minority carrier storage takes place in the n + np + diode, where holes accumulate in the n + region and electrons in the p + region. The extraction of electrons from the p + region is more rapid due to higher electron mobility compared to holes. Thus, the initial current for the next oscillation period is the hole current. In the p + pn + diode the accumulation of holes in the n + region is inferior to that in the n + np + diode due to a higher electric field in the pn + interface. The initial current in p + pn + diodes is lower and the voltage oscillation is almost periodic. The most efficient structure in respect to low minority carrier storage is a pm-type Schottky diode. In this structure the initial conditions in all voltage oscillation periods are the same and there is a quite periodic oscillation in a very wide region of the diode total current density. We show that periodic oscillation can be achieved even in the n + np + diode with optical generation of the carriers during the plasma formation and extraction period.

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“…Despite the fact that TRAPATT diodes were invented many years ago [4], the plasma formation and extraction processes in these diodes are not well understood. In particular, this applies to the carrier diffusion influence on the plasma formation in the high electric field region (50-200 kV/cm).…”

Section: Introductionmentioning

confidence: 99%

Simulation of electron diffusion effect on plasma formation in silicon TRAPATT diodes

Vyšniauskas¹,

Klimenko²,

Matukas³

et al. 2012

Lith. J. Phys.

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Plasma formation and extraction processes in silicon n + np + TRAPATT (TRApped Plasma Avalanche Triggered Transit) diodes were simulated. The drift-diffusion model was chosen for the simulation of the processes. This model is adequate for diodes under consideration with a total thickness of 6.5 µm. Two approximations of carrier diffusion coefficient dependence on the electric field above 20 kV/cm were used. A strong dependence of plasma density and oscillation period on n + n junction steepness was found in the case of a constant electron diffusion coefficient in the electric field range above 20 kV/cm. This behaviour depends on the impact ionization model in silicon. Two models were used. In one of them we included drift and diffusion current in the impact ionisation process. In the other model we included only the drift current in the impact ionisation process. In the second case the influence of the n + n junction steepness on the plasma formation process is much stronger. In the diodes with a highly abrupt n + n junction the TRAPATT mode is impossible. These results explain our experiments on TRAPATT diodes with an abrupt n + n junction.

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High-power, high-efficiency silicon avalanche diodes at ultra high frequencies

Cited by 114 publications

References 4 publications

Generation of powerful microwave voltage oscillations in a diffused silicon diode

Generation of powerful microwave voltage oscillations in a diffused silicon diode

Simulation of silicon n<sup>+</sup>np<sup>+</sup>, p<sup>+</sup>pn<sup>+</sup> and Schottky TRAPATT diodes

Simulation of electron diffusion effect on plasma formation in silicon TRAPATT diodes

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